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CMKD6263_15

产品描述HIGH VOLTAGE SILICON SCHOTTKY DIODES
文件大小490KB,共2页
制造商Central Semiconductor
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CMKD6263_15概述

HIGH VOLTAGE SILICON SCHOTTKY DIODES

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CMKD6263
SURFACE MOUNT
TRIPLE ISOLATED
HIGH VOLTAGE SILICON
SCHOTTKY DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6263
contains three (3) galvanically isolated, high voltage
Silicon Schottky diodes, epoxy molded in a SOT-363
surface mount package. This ULTRAmini™ device has
been designed for fast switching applications requiring a
low forward voltage drop.
MARKING CODE: K63
SOT-363 CASE
FEATURES:
• Meets Galvanic Isolation
Requirements of IEEE 1394
• High Voltage (70V)
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
• ULTRAmini
Package
• Requires less board space than 3 individual diodes
• Low Forward Voltage
SYMBOL
VRRM
IF
IFSM
PD
TJ, Tstg
Θ
JA
70
15
50
250
-65 to +150
500
UNITS
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
BVR
VF
CT
trr
VR=50V
IR=10μA
IF=1.0mA
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
70
395
410
2.0
5.0
98
200
UNITS
nA
V
mV
pF
ns
R4 (13-January 2010)

 
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