CMSSH-3E
CMSSH-3AE
CMSSH-3CE
CMSSH-3SE
w w w. c e n t r a l s e m i . c o m
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSSH-3E
Series types are Enhanced Versions of the
CMSSH-3 Series of Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
FEATURED ENHANCED SPECIFICATIONS:
♦
I
F
from 100mA max to 200mA MAX
SOT-323 CASE
CMSSH-3E:
CMSSH-3AE:
CMSSH-3CE:
CMSSH-3SE:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
♦
♦
B
VR
from 30V min to 40V MIN
V
F
from 1.0V max to 0.8V MAX
CODE:
CODE:
CODE:
CODE:
31E
3AE
3CE
3SE
UNITS
40
200
350
750
250
-65 to +150
500
V
mA
mA
mA
mW
°C
°C/W
MARKING
MARKING
MARKING
MARKING
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ
JA
♦
Continuous Forward Current
Power Dissipation
MAXIMUM RATINGS:
(TA=25°C)
♦
Peak Repetitive Reverse Voltage
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
VR=25V
VR=25V, TA=100°C
IR=100µA
IF=2.0mA
IF=15mA
IF=100mA
IF=200mA
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
40
90
25
50
0.29
0.37
0.61
0.65
7.0
5.0
0.33
0.42
0.80
1.0
500
100
IR
UNITS
nA
μA
V
V
V
V
V
pF
ns
♦
BVR
♦
VF
♦♦
VF
CT
trr
VF
♦
VF
♦
Enhanced specification
♦♦
Additional Enhanced specification
R2 (9-February 2010)
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