CMPD7000E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, IN SERIES
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD7000E is
an Enhanced version of the CMPD7000 Dual, Series
Configuration, Ultra-High Speed Switching Diode. This
device is manufactured by the epitaxial planar process,
in an epoxy molded surface mount SOT-23 package,
designed for high speed switching applications.
MARKING CODE: C5CE
SOT-23 CASE
FEATURED ENHANCED SPECIFICATIONS:
♦
BVR from 100V min to 120V min.
♦
MAXIMUM RATINGS:
(TA=25°C)
♦
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
VF from 1.1V max to 1.0V max.
UNITS
V
mA
mA
mW
°C
°C/W
SYMBOL
VRRM
IO
IFM
PD
TJ, Tstg
Θ
JA
120
200
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
IR
IR
VR=50V
VR=50V, TA=125°C
VR=100V
IR=100µA
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1.0MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
120
0.55
0.67
0.85
150
0.59
0.72
0.91
1.5
2.0
300
100
500
0.65
0.77
1.0
2.6
4.0
UNITS
nA
μA
nA
V
V
V
V
pF
ns
♦
BVR
♦
VF
♦
VF
♦
VF
CT
trr
♦
Enhanced Specification
R4 (27-January 2010)
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