CMPD2005S
CMPD2005SG*
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2005S
and CMPD2005SG each contain two (2) High Voltage
Silicon Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a SOT-23 surface
mount package, designed for applications requiring
high voltage capability.
MARKING CODES:
CMPD2005S:
DB5
CMPD2005SG*: 5SG
SOT-23 CASE
*
Device is
Halogen Free
by design
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
300
350
200
225
625
4.0
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=280V
100
IR
VR=280V, TA=150°C
100
BVR
IR=100μA
350
VF
IF=20mA
0.87
VF
VF
CT
trr
IF=100mA
IF=200mA
VR=0, f=1.0MHz
IR=IF=30mA, Rec. to 3.0mA, RL=100Ω
1.0
1.25
5.0
50
UNITS
nA
μA
V
V
V
V
pF
ns
R3 (25-January 2010)
嵌入式系统
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