CMKD6001
SURFACE MOUNT
TRIPLE ISOLATED
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6001 type
contains three (3) Isolated Silicon Switching Diodes,
manufactured by the epitaxial planar process, epoxy
molded in a ULTRAmini™ surface mount package,
designed for switching applications requiring extremely
low leakage.
MARKING CODE: K01
SOT-363 CASE
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
75
100
250
500
4.0
1.0
250
-65 to +150
500
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=75V
500
BVR
IR=100μA
100
VF
VF
VF
CT
trr
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
0.85
0.95
1.1
2.0
3.0
UNITS
pA
V
V
V
V
pF
μs
R5 (9-May 2011)
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