TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | TO-252 |
| 包装说明 | PLASTIC, SC-63, DPAK-3 |
| 针数 | 3 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 70 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (Abs) (ID) | 14 A |
| 最大漏极电流 (ID) | 14 A |
| 最大漏源导通电阻 | 0.23 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 125 W |
| 最大脉冲漏极电流 (IDM) | 56 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| PHD14NQ20T | PHD14NQ20T,118 | PHP14NQ20T,127 | 934055683127 | 934057072118 | 934055772118 | PHB14NQ20T | PHB14NQ20T/T3 | PHP14NQ20T | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power | MOSFET N-CH 200V 14A DPAK | MOSFET N-CH 200V 14A TO220AB | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | - | - | - | 符合 |
| 厂商名称 | NXP(恩智浦) | - | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 零件包装代码 | TO-252 | - | TO-220AB | TO-220AB | TO-252AA | - | - | - | TO-220AB |
| 包装说明 | PLASTIC, SC-63, DPAK-3 | - | PLASTIC, SC-46, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | PLASTIC, SMD, SC-63, DPAK-3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | - | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | not_compliant | - | unknown | unknown | unknown | unknown | unknow | unknow | unknow |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 70 mJ | - | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ |
| 外壳连接 | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | - | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| 最大漏极电流 (ID) | 14 A | - | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A |
| 最大漏源导通电阻 | 0.23 Ω | - | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 | - | TO-220AB | TO-220AB | TO-252AA | - | - | - | TO-220AB |
| JESD-30 代码 | R-PSSO-G2 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | - | 3 | 3 | 2 | 2 | 2 | 2 | 3 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | - | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 56 A | - | 56 A | 56 A | 56 A | 56 A | 56 A | 56 A | 56 A |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | NO | NO | YES | YES | YES | YES | NO |
| 端子形式 | GULL WING | - | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | - | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
测试/测量
聊聊、笑笑、闹闹
模拟电子
淘e淘
RF/无线
stm32/stm8
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