CMFD2004i
SURFACE MOUNT
DUAL ISOLATED HIGH VOLTAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMFD2004i
consists of two electrically Isolated high voltage
switching diodes packaged in an epoxy molded
SOT-143 surface mount case. This device is
designed for switching applications requiring dual
high voltage diodes.
MARKING CODE: CJP
SOT-143 CASE
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
240
300
200
225
450
4.0
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
IR
BVR
VF
CT
trr
VR=240V
VR=240V, TA=150°C
IR=100μA
IF=100mA
VR=0, f=1.0MHz
IF=IR=30mA, Irr=3.0mA, RL=100Ω
300
1.0
5.0
50
100
100
UNITS
nA
μA
V
V
pF
ns
R5 (13-August 2010)
CMFD2004i
SURFACE MOUNT
DUAL ISOLATED HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONIGURATION
LEAD CODE:
1) Cathode D1
2) Cathode D2
3) Anode D2
4) Anode D1
MARKING CODE: CJP
R5 (13-August 2010)
w w w. c e n t r a l s e m i . c o m
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