CZT7090LE
ENHANCED SPECIFICATION
SURFACE MOUNT
LOW VCE(SAT) PNP
SILICON POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT7090LE is an
Enhanced Specification Low VCE(SAT) PNP Silicon
Power Transistor packaged in an industry standard
SOT-223 case. High Collector Current, coupled with a
Low Saturation Voltage, make this an excellent choice
for industrial and consumer applications where electrical
and thermal operational efficiency are top priorities.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
•
Power Management / DC-DC Converters
•
Portable and Battery Powered Products
•
LAN Equipment / Motor Controllers
MAXIMUM RATINGS:
(TA=25°C)
♦
Collector-Base Voltage
♦
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
♦
ICBO
ICBO
♦
IEBO
♦
BVCBO
♦
BVCEO
♦
BVEBO
♦
VCE(SAT)
♦
VCE(SAT)
♦
VCE(SAT)
VBE(SAT)
hFE
hFE
♦
hFE
hFE
hFE
Cob
fT
CHARACTERISTICS:
(TA=25°C)
TEST CONDITIONS
VCB=50V
VCB=50V, TA=100°C
VEB=5.0V
IC=100μA
IC=10mA
IE=100μA
IC=500mA, IB=5.0mA
IC=1.0A, IB=10mA
IC=2.0A, IB=50mA
IC=2.0A, IB=100mA
VCE=2.0V, IC=10mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=2.0A
VCE=2.0V, IC=3.0A
VCB=10V, IE=0, f=1.0MHz
VCE=5.0V, IC=50mA, f=50MHz
FEATURES:
•
Low VCE(SAT) PNP Transistor
•
High Current (IC=3.0A MAX)
•
VCE(SAT)=0.132V TYP @ IC=2.0A
•
SOT-223 Surface Mount Package
•
Complementary NPN device: CZT3090LE
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
60
50
6.0
3.0
5.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
MIN
TYP
MAX
50
10
50
60
50
6.0
76
124
132
0.888
363
314
281
228
177
175
250
300
1.0
800
UNITS
nA
µA
nA
V
V
V
mV
mV
mV
V
300
250
250
150
100
100
35
pF
MHz
♦
Enhanced specification
R1 (1-March 2010)
嵌入式系统
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