CZT3090LE
ENHANCED SPECIFICATION
SURFACE MOUNT
LOW VCE(SAT) NPN
SILICON POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3090LE is an
Enhanced Specification Low VCE(SAT) NPN Silicon
Power Transistor packaged in an industry standard
SOT-223 case. High Collector Current, coupled with a
Low Saturation Voltage, make this an excellent choice
for industrial and consumer applications where electrical
and thermal operational efficiency are top priorities.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
•
Power Management / DC-DC Converters
•
Portable and Battery Powered Products
•
LAN Equipment / Motor Controllers
FEATURES:
•
Low VCE(SAT) NPN Transitor
•
High Current (IC=3.0A MAX)
•
VCE(SAT)=0.155V TYP @ IC=3.0A
•
SOT-223 Surface Mount Package
•
Complementary PNP device: CZT7090LE
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
W
°C
°C/W
♦
Collector-Base Voltage
♦
Collector-Emitter Voltage
MAXIMUM RATINGS:
(TA=25°C)
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
♦
ICBO
♦
IEBO
♦
BVCBO
♦
BVCEO
BVEBO
VCE(SAT)
♦
VCE(SAT)
♦
VCE(SAT)
♦
VCE(SAT)
♦
hFE
♦
hFE
hFE
♦
Cob
fT
CHARACTERISTICS:
(TA=25°C)
TEST CONDITIONS
VCB=50V
VEB=5.0V
IC=100μA
IC=10mA
IE=10µA
IC=100mA, IB=1.0mA
IC=1.0A, IB=20mA
IC=2.0A, IB=200mA
IC=3.0A, IB=60mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=1.0A
VCE=2.0V, IC=3.0A
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=500mA
60
50
6.0
3.0
5.0
2.0
-65 to +150
62.5
MIN
TYP
MAX
50
50
60
50
6.0
37
66
77
155
300
300
150
100
50
100
150
250
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
174
25
pF
MHz
♦
Enhanced Specification
R1 (1-March 2010)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
