CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
SURFACE MOUNT
DUAL, LOW VCE (SAT)
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
TLM832D CASE
MARKING CODES:
CTLM3410-M832D: CFG
CTLM7410-M832D: CFH
CTLM3474-M832D: CFJ
APPLICATIONS
•
Switching Circuits
•
DC - DC Converters
•
LCD Backlighting
•
Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM3410-M832D
(Dual NPN), CTLM7410-M832D (Dual PNP), and
CTLM3474-M832D (Complementary NPN & PNP) are
Low VCE(SAT) Transistors packaged in the small,
thermally efficient, 3x2mm Tiny Leadless Module
(TLM™) surface mount case. These devices are
designed for applications where small size, operational
efficiency, and low energy consumption are the prime
requirements. Due to its leadless package design this
device is capable of dissipating up to 4 times the power
of similar devices in comparable sized surface mount
packages.
FEATURES
•
Dual Chip Device
•
High Current (1.0A) Transistors
•
Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX)
•
High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
•
Small TLM 3x2mm Leadless Surface Mount Package
•
Complementary Devices
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
W
°C
°C/W
40
25
6.0
1.0
1.65
-65 to +150
76
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
ICBO
VCB=40V
100
IEBO
VEB=6.0V
100
BVCBO
IC=100μA
40
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
IC=10mA
IE=100μA
IC=50mA, IB=5.0mA
IC=100mA, IB=10mA
25
6.0
25
40
30
50
50
75
UNITS
nA
nA
V
V
V
mV
mV
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm
2
.
R3 (1-August 2011)
CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
SURFACE MOUNT
DUAL, LOW VCE (SAT)
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
VCE(SAT)
IC=200mA, IB=20mA
80
VCE(SAT)
IC=500mA, IB=50mA
190
VCE(SAT)
IC=800mA, IB=80mA
290
VCE(SAT)
IC=1.0A, IB=100mA
360
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
fT
Cob
Cob
VCE=1.0V, IC=1.0A
50
VCE=10V, IC=50mA, f=100MHz
100
VCB=10V, IE=0, f=1.0MHz (CTLM3410-M832D)
VCB=10V, IE=0, f=1.0MHz (CTLM7410-M832D)
PNP
TYP
95
205
320
400
MAX
150
250
400
450
1.1
0.9
300
UNITS
mV
mV
mV
mV
V
V
6.0
10
10
15
MHz
pF
pF
TLM832D CASE - MECHANICAL OUTLINE
CTLM3410-M832D
Dual NPN
Marking Code: CFG
CTLM7410-M832D
Dual PNP
Marking Code: CFH
LEAD CODES:
1) Base Q1
2) Emitter Q1
3) Base Q2
4) Emitter Q2
* Note:
- Exposed pad P1 common to pins 7 and 8
- Exposed pad P2 common to pins 5 and 6
CTLM3474-M832D
Complementary NPN & PNP
Marking Code: CFJ
5)
6)
7)
8)
Collector
Collector
Collector
Collector
Q2
Q2
Q1
Q1
R3 (1-August 2011)
w w w. c e n t r a l s e m i . c o m
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
