CMPT3410
SURFACE MOUNT
LOW VCE(SAT)
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3410 type is
a NPN Low VCE(SAT) silicon transistor manufactured
by the epitaxial planar process and epoxy molded in
an SOT-23 surface mount package. This device is
designed for battery driven, handheld devices requiring
high current and Low VCE(SAT).
MARKING CODE: C341
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
40
25
6.0
1.0
1.5
350
-65 to +150
357
MAX
100
100
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VCB=40V
VEB=6.0V
IC=100μA
40
IC=10mA
IE=100μA
IC=50mA, IB=5.0mA
IC=100mA, IB=10mA
IC=200mA, IB=20mA
IC=500mA, IB=50mA
IC=800mA, IB=80mA
IC=1.0A, IB=100mA
IC=800mA, IB=80mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
VCE=1.0V, IC=500mA
VCE=1.0V, IC=1.0A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
25
6.0
25
40
80
190
290
360
50
75
150
250
400
450
1.1
0.9
100
100
100
50
100
6.0
300
MHz
10
pF
R2 (1-August 2011)
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