SIC01L-18
v 6.0
Description
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark
current, high speed and low noise. These features make SiC the best available material for visible blind
semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The
temperature coefficient of signal (responsivity) is also low, <-0.1%/K. Because of the low noise (dark current,
in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs
an appropriate amplifier (see circuit on following page). SiC photodiodes are available as unfiltered broadband
devices or with optical filters providing UV-A, UV-B, or UV-C-only sensitivity, or erythemal action curve
compliance.
Maximum Ratings
(T = 25°C)
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (max. 3s)
Symbol
U
R
T
opr
T
stg
T
sol
Values
Min.
+20
-55
-55
Max.
+170
+170
+260
Unit
V
°C
°C
°C
General Characteristics
(T = 25°C)
Parameter
Active Area
Dark current (1V reverse bias)
Capacitance
Short circuit (10µW/cm² at peak)
Temperature coefficient
Symbol
A
I
d
C
I
D
T
C
Min.*
Values
Typ.*
1.0
0.33
250
10.75
Max.*
Unit
mm²
fA
pF
nA
%/K
-0.1
Spectral Characteristics
(T = 25°C)
Parameter
Max. spectral responsivity
Wavelength of max. spectral resp.
Responsivity range (S=0.1*S
max
)
Visible blindness (S
max
/ S
>405nm
)
Symbol
S
max
λ
max
-
VB
Min.*
0.085
220
10
10
Values
Typ.*
280
Max.*
0.130
360
Unit
AW
nm
nm
-
-1
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Performance Characteristics
Normalized Spectral Responsivity [a.u.]
Viewing Angle
Measurement Setup
lamp aperture diameter: 10 mm
distance lamp aperture to second aperture: 17 mm
second aperture diameter: 10 mm
distance second aperture to detector: 93 mm
pivot level = top surface of the photodiode window
Product Portfolio
We offer the following selection of UV Photodiodes:
Option
SIC01S-18
SIC01S-C18
SIC01S-C5
SIC01S-18ISO90
SIC01M-18
SIC01M-5Lens
SIC01M-C5
SIC01L-18
SIC01L-5
SIC01L-C5
SIC01XL-5
UV sensitivity
UV broadband
UVC
UVC
UV broadband
UV broadband
UV broadband
UVC
UV broadband
UV broadband
UVC
UV broadband
Detector area
0.06 mm
2
0.06 mm
2
0.06 mm
2
0.06 mm
2
0.2 mm
2
0.2 mm
2
0.2 mm
2
1.0 mm
2
1.0 mm
2
1.0 mm
2
4.0 mm
2
Max. spectral responsivity
min.
max.
0.085 AW
-1
0.13 AW
-1
-1
0.066 AW
0.10 AW
-1
0.066 AW
-1
0.10 AW
-1
-1
0.085 AW
0.13 AW
-1
-1
0.085 AW
0.13 AW
-1
0.085 AW
-1
0.13 AW
-1
-1
0.066 AW
0.10 AW
-1
-1
0.085 AW
0.13 AW
-1
0.085 AW
-1
0.13 AW
-1
-1
0.066 AW
0.10 AW
-1
0.085 AW
-1
0.13 AW
-1
Amplified photodiodes (TIAMO
series)
are also available.
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Outline Dimensions
All dimensions in mm
Circuit
Application Note
For correct reading of the photodiode the current (and NOT the voltage) must be analyzed. This requires a
short circuiting of the photodiode. Usual approaches are using a Picoamperemeter or a transimpedance
amplifier circuit as shown above.
To make the photodiode running reliably, particularly in harsh environment, EMC compatibility and protection
against dust, water, and mechanical influences is required. Below listed modules base on a SiC photodiode
and guarantee this protection and safety.
UVTIAMO:
SiC photodiodes with
integrated amplifier
(0-5V output), available for power intensities ranging
from 1.8 pW/cm² to 18 W/cm² for UV broadband, UVA, UVB, UVC or Erythema (UV-Index) mea-
surements.
No additional amplifier needed, direct connection to voltmeter, controller, etc.
UV-probe:
SiC based sensor modules in
customizable industry grade housings
(e.g. cosine response,
water pressure proof, sapphire windows) and
different electronic output configurations
(voltage, current, USB, Can) to choose from.
Ask us for further details!
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The above specifications are for reference purpose only and subjected to change without prior notice.
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