HFS5N65U
March 2013
BV
DSS
= 650 V
HFS5N65U
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
100% Avalanche Tested
GS
=10V
R
DS(on) typ
I
D
= 4.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25
unless otherwise specified
Parameter
Value
650
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
4.5*
2.8*
18*
30
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25 )
- Derate above 25
Operating and Storage Temperature Range
(Note 2)
(Note 1)
(Note 1)
(Note 3)
163
4.5
12.3
4.5
44
0.35
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R
R
JC
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.83
62.5
Units
/W
HFS5N65U
Package Marking and Odering Information
Device Marking
HFS5N65U
HFS5N65US
HFS5N65U
HFS5N65US
Week Marking
YWWX
YWWX
YWWXg
YWWXg
Package
TO-220F(A)
TO-220F(B)
TO-220F(A)
TO-220F(B)
Packing
Tube
Tube
Tube
Tube
Quantity
50
50
50
50
RoHS Status
Pb Free
Pb Free
Halogen Free
Halogen Free
TO-220F(A) : Dual Gauge, TO-220F(B) : Single Gauge
Electrical Characteristics
T
C
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 2.25A
2.5
--
--
2.3
4.5
2.9
V
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
I
D
= 250
, Referenced to 25
650
--
--
--
--
--
0.6
--
--
--
--
--
1
10
100
V
V/
BV
DSS
Breakdown Voltage Temperature
Coefficient
/ T
J
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 520 V, T
C
= 125
V
GS
=
30 V, V
DS
= 0 V
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
600
60
7.7
780
78
10
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 520V, I
D
= 4.5 A,
V
GS
= 10 V
(Note 4,5)
(Note 4,5)
V
DS
= 325 V, I
D
= 4.5 A,
R
G
= 25
--
--
--
--
--
--
--
22
40
45
35
10.5
3.5
3
44
80
90
70
13.5
--
--
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 4.5 A, V
GS
= 0 V
I
S
= 4.5 A, V
GS
= 0 V
di
F
/dt = 100 A/
(Note 4)
--
--
--
--
--
--
--
--
243
1.5
4.5
18
1.4
--
--
A
V
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.8mH, I
AS
=4.5A, V
DD
=50V, R
G
=25 , Starting T
J
=25 C
3. I
SD
4.5A, di/dt
, V
DD
DSS
, Starting T
J
=25 C
4. Pulse Test : Pulse Width
5. Essentially Independent of Operating Temperature
HFS5N65U
Typical Characteristics
10
1
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
I
D
, Drain Current [A]
I
D
, Drain Current [A]
25
o
C
150
o
C
* Notes :
1. 300us Pulse Test
2. T
C
= 25
o
C
-25
o
C
* Notes :
1. V
DS
= 30V
2. 300us Pulse Test
10
-1
0.1
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
6
R
DS(ON)
[ ],
Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
V
GS
= 10V
4
10
V
GS
= 20V
2
1
150
o
C
25
o
C
* Notes :
1. V
GS
= 0V
2. 300us Pulse Test
Note : T
J
= 25 C
o
0
0
2
4
6
8
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
800
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 130V
V
DS
= 325V
V
DS
= 520V
Capacitances [pF]
C
iss
600
8
C
oss
400
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
6
4
200
C
rss
0
10
-1
10
0
10
1
2
Note : I
D
= 4.5A
0
0
3
6
9
12
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HFS5N65U
Typical Characteristics
(continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
Note :
1. V
GS
= 0 V
2. I
D
= 250 A
0.5
Note :
1. V
GS
= 10 V
2. I
D
= 2.25 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
Figure 8. On-Resistance Variation
vs Temperature
5
10
1
100 s
1 ms
10 ms
100 ms
DC
4
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
3
3
10
0
2
10
-1
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150 C
3. Single Pulse
o
1
10
-2
10
0
10
1
10
2
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Z
JC
(t), Thermal Response
D=0.5
10
0
0.2
0.1
0.05
10
-1
* Notes :
1. Z
JC
(t) = 2.83
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
0.02
0.01
single pulse
10
-2
10
-5
-4
-3
-2
P
DM
t
1
10
10
-1
t
2
10
1
10
10
10
0
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
HFS5N65U
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
MEMS传感器
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