CTLT8099-M322S
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT8099-M322S
is a silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a low profile, 2x2mm
TLM™ surface mount package, designed for general
purpose amplification and switching in energy efficient
applications.
MARKING CODE: 89C
TLM322S CASE
APPLICATIONS:
• Load switching
• Display drive
• Power management
• Gate drive
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
W
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
Cib
80
80
6.0
500
1.45
-65 to +150
86.2
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=80V
VBE=6.0V
IC=100μA
IC=10mA
IE=10μA
IC=100mA, IB=5.0mA
IC=100mA, IB=10mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
80
80
6.0
MAX
0.1
0.1
UNITS
μA
μA
V
V
V
0.4
0.3
0.6
100
100
75
150
6.0
25
0.8
300
V
V
V
MHz
pF
pF
R5 (10-October 2012)
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