CMXT2907A
SURFACE MOUNT
DUAL PNP
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2907A type
is a dual PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X2F
SOT-26 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
60
60
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
10
ICBO
VCB=50V, TA=125°C
10
ICEV
VCE=30V, VBE=0.5V
50
BVCBO
IC=10µA
60
BVCEO
IC=10mA
60
BVEBO
IE=10µA
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.4
VCE(SAT)
IC=500mA, IB=50mA
1.6
VBE(SAT)
IC=150mA, IB=15mA
1.3
VBE(SAT)
IC=500mA, IB=50mA
2.6
hFE
VCE=10V, IC=0.1mA
75
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
Cib
VBE=2.0V, IC=0, f=1.0MHz
30
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
ns
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
40
ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
R3 (12-February 2010)
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