CMUT5401E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT5401E is a
PNP Silicon Transistor, packaged in an SOT-523 case,
designed for general purpose amplifier applications
requiring high breakdown voltage and small space
saving packaging.
MARKING CODE: 4C5
FEATURES:
SOT-523 CASE
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA Max
APPLICATIONS:
• Low Saturation Voltage 150mV Max @ 50mA
• General purpose switching and amplification • Complementary Device CMUT5551E
• Telephone applications
• SOT-523 Surface Mount Package
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
250
220
7.0
600
250
-65 to +150
500
UNITS
V
V
V
mA
mW
°C
°C/W
♦
♦
Collector-Emitter Voltage
♦
Emitter-Base Voltage
Power Dissipation
Continuous Collector Current
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
IEBO
VCB=120V
VCB=120V, TA=100°C
VEB=3.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
250
220
7.0
MAX
50
50
50
UNITS
nA
μA
nA
V
V
V
♦
BVCBO
♦
BVCEO
♦
BVEBO
♦
VCE(SAT)
♦
VCE(SAT)
VBE(SAT)
VBE(SAT)
100
150
1.00
1.00
mV
mV
V
V
♦
Enhanced Specification
R1 (9-February 2010)
CMUT5401E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
♦
hFE
♦
hFE
♦
hFE
♦
hFE
fT
Cob
hfe
NF
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=150mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
100
100
75
25
100
300
6.0
40
200
MHz
pF
300
8.0
dB
♦
Enhanced Specification
SOT-523 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: 4C5
R1 (9-February 2010)
w w w. c e n t r a l s e m i . c o m