CMST5086
CMST5087
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST5086,
CMST5087 types are PNP silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini™ surface mount package,
designed for applications requiring high gain and low
noise.
MARKING CODES: CMST5086: 2PC
CMST5087: 2QC
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
50
50
3.0
50
275
-65 to +150
455
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CMST5086
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=10V
-
10
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
NF
VCB=35V
IC=100μA
IC=1.0mA
IE=100μA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=20mA, RS=10kΩ
f=10Hz to 15.7kHz
VCE=5.0V, IC=100μA, RS=3.0kΩ
f=1.0kHz
-
50
50
3.0
-
-
150
150
150
40
-
150
-
-
50
-
-
-
0.30
0.85
500
-
-
-
4.0
600
3.0
3.0
CMST5087
MIN MAX
-
10
-
50
50
3.0
-
-
250
250
250
40
-
250
-
-
50
-
-
-
0.30
0.85
800
-
-
-
4.0
900
2.0
2.0
UNITS
nA
nA
V
V
V
V
V
MHz
pF
dB
dB
R3 (9-February 2010)
PCB设计
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