RUS100N02
Nch 20V 10A Middle Power MOSFET
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Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
20V
12mΩ
±10A
2.0W
SOP8
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Inner circuit
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Features
1) Low on - resistance.
2) High Power small mold Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D
I
D,pulse*1
V
GSS
P
D*2
T
j
T
stg
Value
20
±10
±36
±10
2.0
150
-55 to +150
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Application
Type
Embossed
Tape
330
12
2500
TB
RUS100N02
Unit
V
A
A
V
W
℃
℃
Switching
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Absolute maximum ratings
(T
a
= 25°C)
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© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141001 - Rev.001
RUS100N02
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
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Electrical characteristics (T
a
= 25°C)
Symbol
R
thJA*2
Values
Min.
-
Typ.
62.5
Max.
-
Unit
℃
/W
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Symbol
Conditions
Values
Min.
20
-
-
-
0.3
-
-
-
-
-
15
Typ.
-
18.7
-
-
-
2.5
8
9
11
13
-
Max.
-
-
1
±10
1.0
-
12
13
16
19
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
GS
= 4.5V, I
D
= 10A
Static drain - source
on - state resistance
R
DS(on)*3
V
GS
= 2.5V, I
D
= 10A
V
GS
= 1.8V, I
D
= 5A
V
GS
= 1.5V, I
D
= 2.5A
Transconductance
*1 Pw
≦
10μs, Duty cycle
≦
1%
*2 Mounted on a ceramic boad
*3 Pulsed
g
fs*3
V
DS
= 10V, I
D
= 10A
mΩ
S
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© 2014 ROHM Co., Ltd. All rights reserved.
2/11
20141001 - Rev.001
RUS100N02
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*3
t
r*3
t
d(off)*3
t
f*3
Conditions
Min.
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
10V,V
GS
= 4.5V
Unit
Typ.
2250
550
280
25
65
125
125
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= 5A
R
L
= 2Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*3
Q
gs*3
Q
gd*3
V
DD
⋍
10V, I
D
= 10A
V
GS
= 4.5V
Conditions
Min.
-
-
-
Typ.
24
3.2
6.4
Max.
-
-
-
nC
Unit
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Symbol
I
S
T
a
= 25
℃
I
SP*1
V
SD*3
V
GS
= 0V, I
S
= 10A
-
-
-
-
36
1.2
V
Conditions
Min.
Typ.
-
Max.
1.6
A
Unit
Body diode continuous
forward current
Body diode
pulse current
Forward voltage
-
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© 2014 ROHM Co., Ltd. All rights reserved.
3/11
20141001 - Rev.001
RUS100N02
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2014 ROHM Co., Ltd. All rights reserved.
4/11
20141001 - Rev.001
RUS100N02
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
Fig.8 Typical Transfer Characteristics
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© 2014 ROHM Co., Ltd. All rights reserved.
5/11
20141001 - Rev.001
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