Schottky Barrier Diode
RSX201VAM30
lApplication
General rectification
lDimensions
(Unit : mm)
1.4±0.1
0.8±0.05
(1)
0.17±0.04
0.6±0.1
2.0
2.0±0.1
Data
Sheet
lLand
Size Figure
(Unit : mm)
1.1
TUMD2M
0½0.1
2) High reliability
3) Low V
F
and low I
R
(2)
lStructure
ROHM : TUMD2M
Manufacture date and factory
(1)Cathode
lConstruction
Silicon epitaxial planar type
lTaping
Dimensions
(Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.1
Φ 1.5
-0
+0.1
(2) Anode
1.75±0.1
0.25±0.05
3.5±0.05
2.8±0.05
5.5±0.2
1.53±0.03
Φ 1.0
-0
+0.2
8.0±0.2
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Symbol
V
RM
V
R
I
o
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct Reverse Voltage
Alumina board mounted, 60Hz half sin Wave,
resistive load, T
c
=105°C Max.
Glass epoxy board mounted, 60Hz half sin Wave,
Limits
30
30
1.5
1.0
8
125
-40
to
+125
0.8
0.9±0.08
1) Small mold type (TUMD2M)
2.5±0.1
0.5
lFeatures
Unit
V
V
A
A
A
°C
°C
resistive load, T
c
=90°C Max.
60Hz half sin wave,
Non-repetitive at T
a
=25°C, 1cycle
Operating Junction Temperature
Storage Temperature
-
-
lElectrical
Characteristics
(T
j
= 25°C)
Parameter
Forward Voltage
Symbol
V
F1
V
F2
I
R1
I
R2
Conditions
I
F
=1.0A
I
F
=1.5A
V
R
=5V
V
R
=30V
Min.
-
-
-
-
Typ. Max. Unit
0.36 0.42
0.40 0.46
15
70
60
300
V
V
mA
mA
Reverse Current
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A
RSX201VAM30
lElectrical
Characteristic Curves
Data Sheet
250
290
T
j
=25°C
V
R
=30V
n=30pcs
285
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(mA)
200
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
280
275
270
265
260
255
Ave. : 255pF
150
Ave. : 78.3mA
100
50
0
250
I
R
DISPERSION MAP
C
t
DISPERSION MAP
80
40
REVERSE RECOVERY TIME : t
rr
(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
70
60
50
35
30
25
20
15
10
5
0
Ave. : 7.8ns
I
FSM
1cyc
8.3ms
T
a
=25°C
T
j
=25°C
I
F
=0.5A
I
R
=1.0A
I
rr
/ I
R
=0.25
n=10pcs
Ave. : 33.2A
40
30
20
10
0
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.03 - Rev.A
RSX201VAM30
lElectrical
Characteristic Curves
Data Sheet
TRANSIENT
THERMAL IMPEDANCE : R
th
(°C/W)
1000
R
th(j-a)
100
R
th(j-c)
Glass epoxy board mounted
3
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=125°C
2
DC
Glass epoxy board mounted
Sin(θ=180)
1
10
IM=100mA
I
F
=1A
time
1ms 300ms
D = 1/2
0
1
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
TIME : t(s)
R
th
-t CHARACTERISTICS
AMBIENT TEMPERATURE : T
a
(°C)
DERATING CURVE (I
o
-T
a
)
3
I
O
0A
0V
30
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=125°C
No destruction at 30kV
25
20
15
10
5
0
C=200pF
R=0W
C=100pF
R=1.5kW
AVE. : 11.4kV
2
DC
Glass epoxy board mounted
D = 1/2
1
Sin(θ=180)
0
0
25
50
75
100
125
CASE TEMPERATURE : T
c
(°C)
DERATING CURVE (I
o
-T
c
)
ESD DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.03 - Rev.A
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