CWDM305PD
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM305PD
is a dual high current P-channel enhancement-mode
silicon MOSFET manufactured by the P-channel
DMOS process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
high current, low rDS(ON), low threshold voltage, and
low gate charge.
MARKING CODE: C503
SOIC-8 CASE
APPLICATIONS:
•
Load/Power switches
•
Power supply converter circuits
•
Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
Low rDS(ON) (83mΩ MAX @ VGS=5.0V)
•
High current (ID=5.3A)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
A
A
W
°C
°C/W
30
16
5.3
21.2
2.0
-55 to +150
62.5
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
I
GSSF, IGSSR
VGS=20V, VDS=0
100
IDSS
VDS=30V, VGS=0
1.0
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=10V, ID=2.7A
VGS=5.0V, ID=2.7A
VDS=5.0V, ID=5.3A
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDD=15V, VGS=5.0V,
VDD=15V, VGS=5.0V,
ID=5.3A
ID=5.3A
30
1.0
0.066
0.077
11
50
500
60
4.7
1.4
1.7
7.0
8.0
60
590
150
7.0
2.1
2.5
3.0
0.072
0.083
UNITS
nA
μA
V
V
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
VDD=15V, VGS=5.0V, ID=5.3A
VDD=15V, ID=5.3A, RG=10Ω
VDD=15V, ID=5.3A, RG=10Ω
R2 (23-August 2012)
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