CWDM305ND
SURFACE MOUNT
DUAL N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM305ND is
a dual, high current N-channel enhancement-mode
silicon MOSFET designed for high speed pulsed
amplifier and driver applications. This energy efficient
MOSFET offers beneficially low rDS(ON), low gate
charge, and low threshold voltage.
MARKING CODE: C305
SOIC-8 CASE
APPLICATIONS:
•
Load/Power switches
•
DC-DC converter circuits
•
Power management
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
Low rDS(ON)
•
High current
•
Low gate charge
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
30
20
5.8
23.2
2.0
-55 to +150
62.5
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I
GSSF, IGSSR
VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=10V, ID=2.9A
VGS=5.0V, ID=2.9A
VDS=5.0V, ID=5.8A
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDD=15V, VGS=5.0V,
VDD=15V, VGS=5.0V,
ID=5.8A
ID=5.8A
VDD=15V, VGS=5.0V, ID=5.8A
VDD=15V, ID=5.8A, RG=10Ω
VDD=15V, ID=5.8A, RG=10Ω
30
1.0
0.024
0.028
12
50
500
52
4.2
0.9
1.4
6.5
8.5
MAX
100
1.0
3.0
0.030
0.034
54
560
90
6.3
1.4
2.1
UNITS
nA
μA
V
V
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
R3 (1-November 2012)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
