CWDM3011P
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM3011P is
a high current silicon P-Channel enhancement-mode
MOSFET designed for high speed pulsed amplifier
and driver applications. This MOSFET has high current
capability with beneficially low rDS(ON), and low gate
charge.
MARKING CODE: C3011P
SOIC-8 CASE
APPLICATIONS:
•
Load/Power switches
•
DC-DC converter circuits
•
Power management
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
Low rDS(ON)
•
High current
•
Low gate charge
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
30
20
11
50
2.5
-55 to +150
50
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I
GSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=0, IS=2.6A
VGS=10V, ID=11A
VGS=4.5V, ID=8.5A
VDS=8.0V, VGS=0, f=1.0MHz
VDS=8.0V, VGS=0, f=1.0MHz
VDS=8.0V, VGS=0, f=1.0MHz
VDD=15V, VGS=10V,
VDD=15V, VGS=10V,
VDD=15V, VGS=10V,
VDD=15V, VGS=10V,
RG=6.0Ω, RL=15Ω
ID=11A
ID=11A
ID=11A
ID=1.0A
30
1.0
1.4
12
15
450
3100
320
80
7.0
10.1
49
330
MAX
100
1.0
3.0
1.3
20
30
UNITS
nA
μA
V
V
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
R1 (6-August 2013)
微控制器 MCU
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