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CTLDM8002A-M621H_15

产品描述SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET
文件大小914KB,共4页
制造商Central Semiconductor
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CTLDM8002A-M621H_15概述

SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET

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CTLDM8002A-M621H
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM8002A-M621H
is a very low profile (0.4mm) P-Channel enhancement-mode
MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM™
package.
MARKING CODE: CNC
TLM621H CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
FEATURES:
Low rDS(on)
Low VDS(on)
Low Threshold Voltage
Fast Switching
Logic Level Compatible
Small, Very Low Profile, TLM™
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ
JA
otherwise noted)
MIN
UNITS
V
V
V
mA
mA
A
A
W
°C
°C/W
50
50
20
280
280
1.5
1.5
1.6
-65 to +150
75
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR
VGS=20V, VDS=0
IDSS
VDS=50V, VGS=0
IDSS
VDS=50V, VGS=0, TJ=125°C
ID(ON)
VGS=10V, VDS=10V
BVDSS
VGS=0, ID=10μA
VGS(th)
VDS=VGS, ID=250μA
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=115mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TJ=125°C
VGS=5.0V,
VGS=5.0V,
ID=50mA
ID=50mA, TJ=125°C
MAX
100
1.0
500
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
500
50
1.0
2.5
1.5
0.15
1.3
2.5
4.0
3.0
5.0
Note: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm
2
.
R4 (6-February 2015)

 
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