CTLDM7120-M832D
SURFACE MOUNT
DUAL, N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLDM7120-M832D is an Enhancement-mode Dual
N-Channel Field Effect Transistor, manufactured by the
N-Channel DMOS Process, designed for high speed
pulsed amplifier and driver applications. This MOSFET
offers Low rDS(ON) and Low Threshold Voltage.
MARKING CODE: CFT
TLM832D CASE
• Device is
Halogen Free
by design
FEATURES:
•
ESD protection up to 2kV
•
Low rDS(ON) (0.25Ω MAX @ VGS=1.5V)
•
High current (ID=1.0A)
•
Logic level compatibility
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
20
8.0
1.0
4.0
1.65
-65 to +150
76
unless otherwise noted)
TYP
MAX
10
10
1.2
1.1
0.10
0.14
0.25
UNITS
V
V
A
A
W
°C
°C/W
APPLICATIONS:
•
Switching Circuits
•
DC - DC Converters
•
Battery powered portable devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=10V, ID=1.0mA
0.5
VSD
VGS=0, IS=1.0A
rDS(ON)
VGS=4.5V, ID=500mA
rDS(ON)
VGS=2.5V, ID=500mA
rDS(ON)
VGS=1.5V, ID=100mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
gFS
VDS=10V, ID=500mA
Crss
VDS=10V, VGS=0, f=1.0MHz
Ciss
VDS=10V, VGS=0, f=1.0MHz
Coss
VDS=10V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=5.0V, ID=500mA
toff
VDD=10V, VGS=5.0V, ID=500mA
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm
2
.
0.075
0.10
0.17
2.4
0.25
0.65
4.2
45
220
120
25
140
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
R2 (2-August 2011)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
