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RS1K

产品描述1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
产品类别半导体    分立半导体   
文件大小220KB,共2页
制造商BAIDUMICRO
官网地址http://bdwdz.com
下载文档 详细参数 选型对比 全文预览

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RS1K概述

1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

1 A, 800 V, 硅, 信号二极管, DO-214交流

RS1K规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述LEAD FREE, PLASTIC, SMA, 2 PIN
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子位置DUAL
包装材料PLASTIC/EPOXY
结构SINGLE
二极管元件材料SILICON
二极管类型SIGNAL DIODE
反向恢复时间最大0.5000 us
最大重复峰值反向电压800 V
最大平均正向电流1 A

文档预览

下载PDF文档
百度微电子有限公司
BAIDU MICRO ELECTRONS CO., LTD.
RS1A thru RS1M
SURFACE MOUNT
FAST RECOVERY RECTIFIERS
FEATURES
Fast switching for high efficiency
Low cost
Diffused junction
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Amperes
SMA(DO-214AC)
.051(1.30)
.039(1.00)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
MECHANICAL DATA
Case: Molded Plastic
Polarity: lndicated by cathode band
Weight: 0.002 ounces,0.064 grams
Mounting position: Any
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25℃
@T
J
=100℃
@T
A
=75
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
RS1A
50
35
50
RS1B
100
70
100
RS1D
200
140
200
RS1G
400
280
400
1.0
RS1J
600
420
600
RS1K
800
560
800
RS1M
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
T
RR
C
J
R
θJA
T
J
T
STG
150
25
30
1.3
5.0
100
250
15
25
-55 to +125
-55 to +150
500
A
V
μA
nS
pF
℃/W
Maximum Reverse Recovery Time (Note 1)
Tyical Junction Capacitance (Note2)
Tyical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A,I
RR
=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction of ambient.

RS1K相似产品对比

RS1K RS1A RS1G RS1B RS1D RS1J RS1M
描述 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 0.7 A, SILICON, SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
状态 ACTIVE ACTIVE ACTIVE ACTIVE - ACTIVE TRANSFERRED
二极管类型 SIGNAL DIODE SIGNAL DIODE 信号二极管 SIGNAL DIODE - 信号二极管 信号二极管

 
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