10-FZ06NIA030SA-P924F33
preliminary datasheet
flowNPC0
Features
Neutral-point-Clamped inverter
Clip-In PCB mounting
Low Inductance Layout
600V/30A
flow0 housing
Target Applications
UPS and Solar
Schematic
Types
10-FZ06NIA030SA-P924F33
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Buck IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Turn off safe operating area
V
CES
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
150°
C
V
CE
<=V
CES
T
j
150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
C
T
h
=80°
C
T
c
=80°
T
h
=80°
=80 C
T
c
=80°
C
600
30
40
90
56
85
±20
6
360
175
60
V
A
A
W
V
μs
V
°
C
A
Buck FWD
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
C
T
j
=25°
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
c
=100°
C
C
T
h
=80°
C
T
c
=80°
600
27
36
90
44
67
175
V
A
A
W
°
C
copyright
Vincotech
1
Revision: 1
10-FZ06NIA030SA-P924F33
preliminary datasheet
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Boost IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Turn off safe operating area
V
CES
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
j
max
C
T
j
150°
V
CE
<=V
CES
T
j
150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
C
T
h
=80°
T
c
=80°
C
T
h
=80°
C
C
T
c
=80°
600
30
39
90
56
85
±20
6
360
175
60
V
A
A
W
V
μs
V
°
C
A
Buck and Boost Inverse FWD
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
c
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
C
T
h
=80°
T
c
=80°
C
T
h
=80°
C
C
T
c
=80°
600
26
36
90
44
67
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright
Vincotech
2
Revision: 1
10-FZ06NIA030SA-P924F33
preliminary datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness 50um
= 1 W/mK
±15
480
30
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=16
Rgon=16
±15
350
30
C
Tj=25°
Tj=125°
C
Tj=25°
C
C
Tj=125°
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
600
0
0,00043
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
C
Tj=125°
Tj=25°
C
Tj=125°
C
5
1
5,8
1,54
1,73
6,5
1,95
30
350
none
98
101
11
16
155
174
93
107
0,47
0,62
0,80
1,02
1630
108
50
167
1,69
nC
K/W
pF
V
V
μA
nA
ns
mWs
Buck FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
Thermal grease
thickness 50um
= 1 W/mK
Rgon=16
±15
350
30
30
C
Tj=25°
Tj=125°
C
Tj=25°
C
Tj=125°
C
C
Tj=25°
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1
1,75
1,73
36
39
127
183
1,41
2,29
4073
2293
0,33
0,55
2,15
2,05
V
A
ns
μC
A/μs
mWs
K/W
copyright
Vincotech
3
Revision: 1
10-FZ06NIA030SA-P924F33
preliminary datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness 50um
= 1 W/mK
±15
480
30
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=16
Rgon=16
±15
350
30
Tj=25°
C
Tj=125°
C
C
Tj=25°
Tj=125°
C
C
Tj=25°
Tj=125°
C
Tj=25°
C
Tj=125°
C
C
Tj=25°
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
600
0
0,00043
30
Tj=25°
C
Tj=125°
C
C
Tj=25°
C
Tj=125°
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1
5,8
1,54
1,73
6,5
1,95
30
350
none
102
102
15
18
158
177
88
105
0,45
0,59
0,81
1,04
1630
108
50
167
1,69
nC
K/W
pF
V
V
μA
nA
ns
mWs
Buck and Boost Inverse FWD
Diode forward voltage
Thermal resistance chip to heatsink per chip
V
F
R
thJH
Thermal grease
thickness 50um
= 1 W/mK
30
C
Tj=25°
Tj=125°
C
1
1,75
1,73
2,15
2,05
V
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
R/R
P
R100=1486
T=25°
C
T=100°
C
T=25°
C
T=25°
C
T=25°
C
T=25°
C
T=25°
C
-5
200
2
3950
3996
B
22000
5
%
mW
mW/K
K
K
copyright
Vincotech
4
Revision: 1
10-FZ06NIA030SA-P924F33
preliminary datasheet
Buck
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
90
I
C
(A)
IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
90
I
C
(A)
IGBT
75
75
60
60
45
45
30
30
15
15
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
s
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
s
125
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
30
I
C
(A)
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
90
I
F
(A)
FWD
T
j
= 25 C
25
75
T
j
= T
jmax
-25 C
20
60
T
j
= T
jmax
-25 C
15
45
10
30
T
j
= 25 C
5
15
0
0
2
4
6
8
V
GE
(V)
10
0
0
0,5
1
1,5
2
2,5
V
F
(V)
3
At
t
p
=
V
CE
=
250
10
s
V
At
t
p
=
250
s
copyright
Vincotech
5
Revision: 1
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