SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
・Excellent
Switching Times
: t
on
=1.6μ
S(Max.), t
f
=0.7μ
S(Max.), at I
C
=5A
・High
Collector Voltage : V
CBO
=700V.
MJE13007F
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
(Tc=25℃)
Junction Temperature
Storage Temperature Range
I
CP
I
B
P
C
T
j
T
stg
16
4
40
150
-55½150
A
W
℃
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATING
700
400
9
8
A
UNIT
V
V
V
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Emitter Cut-off Current
DC Current Gain
h
FE
(2)
Collector-Emitter
Saturation Voltage
V
CE
=5V, I
C
=5A
I
C
=2A, I
B
=0.4A
V
CE(sat)
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=2A
I
C
=2A, I
B
=0.4A
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
V
BE(sat)
I
C
=5A, I
B
=1A
C
ob
f
T
t
on
t
stg
t
f
I
B1
I
B2
I
B1
=I
B2
=1A
DUTY CYCLE < 2%
=
I
B2
SYMBOL
I
EBO
h
FE
(1) (Note)
TEST CONDITION
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=2A
MIN.
-
15
10
-
-
-
-
-
-
4
OUTPUT
TYP.
-
-
-
-
-
-
-
-
110
-
-
-
-
MAX.
1
39
-
1
2
3
1.5
UNIT
mA
V
V
1.6
-
-
1.6
3
0.7
pF
MHz
μ
S
μ
S
μ
S
V
CB
=10V, f=0.1MHz, I
E
=0
V
CE
=10V, I
C
=0.5A
300µS
25Ω
INPUT
I
B1
-
-
-
V
CC
=125V
Note : h
FE
Classification R:15½27, O:23½39
2008. 3. 26
Revision No : 6
1/2
51单片机
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