SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: t
on
=1.1 S(Typ.), t
f
=0.7 S(Typ.), at I
C
=1A
High Collector Voltage : V
CBO
=900V.
H
J
K
MJE13003HV
TRIPLE DIFFUSED NPN TRANSISTOR
A
B
C
E
F
D
G
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
900
530
9
1.5
A
3
0.75
20
150
-55 150
A
W
UNIT
V
V
V
1. EMITTER
2. COLLECTOR
3. BASE
N
1
2
3
M
O
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
Φ3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
+
0.1
2.3
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Emitter Cut-off Current
SYMBOL
I
EBO
h
FE
(1)
DC Current Gain
*h
FE
(2)
h
FE
(3)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
*Note : h
FE
Classification R:20
V
CE(sat)
TEST CONDITION
V
EB
=9V, I
C
=0
V
CE
=10V, I
C
=10 A
V
CE
=10V, I
C
=0.4A
V
CE
=10V, I
C
=1A
I
C
=0.5A, I
B
=0.1A
I
C
=1.5A, I
B
=0.5A
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
V
CB
=10V, f=0.1MHz, I
E
=0
V
CE
=10V, I
C
=0.1A
OUTPUT
300µS
INPUT
I
B1
125Ω
I
B2
I
B2
I
B1
MIN.
-
15
20
6
-
-
-
-
-
4
-
-
-
TYP.
-
-
-
-
-
-
-
-
21
-
1.1
3.0
0.7
MAX.
10
40
40
-
0.8
UNIT
A
V
2.5
1
V
1.2
-
-
-
-
-
pF
MHz
S
S
S
V
BE(sat)
C
ob
f
T
t
on
t
stg
t
f
35, O:25 40
I
B1
=I
B2
=0.2A
DUTY CYCLE < 2%
=
V
CC
=125V
2008. 5. 6
Revision No : 2
1/2
MJE13003HV
STATIC CHARACTERIC
COLLECTOR CURRENT I
C
(A)
2.0
1.8
1.2
0.8
0.4
Ib=0mA
Ib=500mA
DC CURRENT GAIN
100
V
CE
=10V
Ib=400mA
Ib=300mA
Ib=200mA
Ib=100mA
Ib=50mA
DC CURRENT GAIN h
FE
5
10
0
0
1
2
3
4
1
0.01
0.1
1
10
COLLECTOR EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
O
(A)
V
CE(sat)
vs. V
BE(sat)
100
I
C
=4Ib
SWITCHING TIME
100
t
stg
SATURATION VOLTAGE
V
BE(sat)
, V
CE(sat)
(V)
Tstg, Tf(µS), TIME
10
V
BE(sat)
10
1
V
CE(sat)
1
t
f
0.1
0.01
0.1
1
10
0.1
0.1
1
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
SAFE OPERATING AREA
10
1.25
P
C
- Ta
POWER DISSIPATION P
C
(W)
COLLETOR CURRENT I
C
(A)
I
c max
(Pulse)
I
c max
(DC)
5m
1m
s
10
10µs
0
µ
s
1.1
1
0.75
0.5
0.25
0
0
50
Tc=Ta INFINITE HEAT SINK
1
s
0.1
0.01
1
10
100
1000
100
150
200
COLLECTOR EMITTER VOLTAGE V
CE
(V)
AMBIENT TEMPERATURE Ta ( C)
2008. 5. 6
Revision No : 2
2/2
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