PD - 96118A
IRF8707PbF
Applications
Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l
Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
l
HEXFET
®
Power MOSFET
V
DSS
30V
11.9m
:
@V
GS
= 10V 6.2nC
A
A
D
D
D
D
R
DS(on)
max
Qg
Benefits
l
l
l
l
l
l
l
S
S
S
G
1
2
3
4
8
7
Very Low Gate Charge
Very Low R
DS(on)
at 4.5V V
GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V V
GS
Max. Gate Rating
100% tested for Rg
Lead-Free
6
5
Top View
SO-8
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck
operation
including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
11
9.1
88
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
www.irf.com
1
10/24/07
IRF8707PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.022
9.3
14.2
1.80
-5.8
–––
–––
–––
–––
–––
6.2
1.4
0.7
2.2
1.9
2.9
3.7
2.2
6.7
7.9
7.3
4.4
760
170
82
–––
–––
11.9
17.5
2.35
–––
1.0
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 11A
mΩ
V
GS
= 4.5V, I
D
= 8.8A
V V
DS
= V
GS
, I
D
= 25µA
e
e
mV/°C V
DS
= V
GS
, I
D
= 25µA
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
V
GS
= 20V
100
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 8.8A
9.3
–––
–––
–––
–––
–––
–––
3.7
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 8.8A
See Figs. 15 & 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 8.8A
ns
R
G
= 1.8Ω
See Fig. 18
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
53
8.8
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
12
13
3.1
88
1.0
18
20
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.8A, V
DD
= 15V
di/dt = 300A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF8707PbF
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
0.1
2.3V
0.01
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
2.3V
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
10
100
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 11A
VGS = 10V
ID, Drain-to-Source Current (A)
10
T J = 150°C
1.5
1
T J = 25°C
1.0
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF8707PbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
5.0
ID= 8.8A
VGS, Gate-to-Source Voltage (V)
4.0
C, Capacitance (pF)
VDS= 24V
VDS= 15V
1000
Ciss
3.0
Coss
100
Crss
2.0
1.0
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
100µsec
10
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF8707PbF
12
10
ID, Drain Current (A)
VGS(th) , Gate Threshold Voltage (V)
2.5
2.2
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
1.9
ID = 250µA
1.6
ID = 25µA
1.3
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
SINGLE PULSE
( THERMAL RESPONSE )
P
DM
0.1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
Ri (°C/W)
2.2284
7.0956
25.4895
15.1981
τi
(sec)
0.000169
0.013738
0.68725
25.8
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
Ci=
τi/Ri
Ci=
τi/Ri
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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