IRF8252TRPbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
25
2.7
35
25
V
mΩ
nC
A
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
Q
g (typical)
I
D
(@T
A
= 25°C)
6
5
Top View
SO-8
Applications
l
Synchronous MOSFET for Notebook Processor Power
l
Synchronous Rectifier MOSFET for Isolated DC-DC Converters
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF8252PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF8252TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
25
±20
25
20
200
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
1
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
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2014 International Rectifier
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October 16, 2014
IRF8252TRPbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
89
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.018
2.0
2.9
1.80
-6.67
–––
–––
–––
–––
–––
35
10
4.6
12
8.9
16
26
0.61
23
32
19
12
5305
1340
725
–––
–––
2.7
3.7
2.35
–––
1.0
V
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
mΩ
V
GS
= 4.5V, I
D
= 20A
V V
DS
= V
GS
, I
D
= 100μA
e
e
mV/°C V
DS
= V
GS
, I
D
= 100μA
V
DS
= 20V, V
GS
= 0V
μA
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
150
V
GS
= 20V
100
nA
-100
V
GS
= -20V
–––
S V
DS
= 13V, I
D
= 20A
53
–––
–––
–––
–––
–––
–––
1.22
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
nC
V
DS
= 13V
V
GS
= 4.5V
I
D
= 20A
See Figs. 15 & 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 20A
R
G
= 1.8Ω
See Fig. 18
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Max.
231
20
Units
mJ
A
ns
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
19
12
3.1
200
1.0
29
18
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
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©
2014 International Rectifier
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 13V
di/dt = 230A/μs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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October 16, 2014
IRF8252TRPbF-1
1000
TOP
1000
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
0.1
0.01
10
≤
60μs PULSE WIDTH
2.3V
Tj = 25°C
1
2.3V
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
100
0.1
1
10
100
0.001
0.1
1
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.6
ID, Drain-to-Source Current (A)
VDS = 15V
≤
60μs PULSE WIDTH
100
ID = 25A
1.4
VGS = 10V
1.2
10
T J = 150°C
1.0
1
T J = 25°C
0.8
0.1
1
2
3
4
5
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
3
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©
2014 International Rectifier
Fig 4.
Normalized On-Resistance
vs. Temperature
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October 16, 2014
IRF8252TRPbF-1
100000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 20A
VDS= 20V
VDS= 13V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
ISD, Reverse Drain Current (A)
100
T J = 150°C
ID, Drain-to-Source Current (A)
100
10
10msec
1
10
T J = 25°C
T A = 25°C
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
0
Tj = 150°C
Single Pulse
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
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October 16, 2014
IRF8252TRPbF-1
30
25
ID, Drain Current (A)
VGS(th) , Gate Threshold Voltage (V)
2.5
20
15
10
5
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
ID = 100μA
ID = 250μA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
R
1
R
1
τ
J
τ
J
τ
1
R
2
R
2
R
3
R
3
R
4
R
4
R
5
R
5
R
6
R
6
R
7
R
7
R
8
R
8
τ
A
τ
1
τ
2
τ
2
τ
3
τ
3
τ
4
τ
4
τ
5
τ
5
τ
6
τ
6
τ
7
τ
7
τ
A
Ri (°C/W)
τi
(sec)
0.02127 0.000002
0.02040 0.000006
0.21216 0.000082
0.79696 0.001560
6.31529 0.028913
0.45152 0.006475
26.2230 1.208856
16.5590 45.68988
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.01
0.1
1
10
100
1000
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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©
2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
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