PD - 95336A
IRF7910PbF
Applications
l
HEXFET
®
Power MOSFET
V
DSS
12V
l
l
High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications
Power Management for Netcom,
Computing and Portable Applications
Lead-Free
R
DS(on)
max
15mΩ @V
GS
= 4.5V
I
D
10A
S1
G1
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Benefits
l
l
l
S2
G2
Ultra-Low Gate Impedance
Very Low R
DS(on)
Fully Characterized Avalanche Voltage
and Current
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
10
7.9
79
2.0
1.3
16
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
Notes
through
are on page 8
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1
07/21/08
IRF7910PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
12
–––
–––
–––
0.6
–––
–––
–––
–––
Typ.
–––
0.01
11.5
20
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
15
V
GS
= 4.5V, I
D
= 8.0A
mΩ
50
V
GS
= 2.8V, I
D
= 5.0A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
100
V
DS
= 9.6V, V
GS
= 0V
µA
250
V
DS
= 9.6V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 12V
nA
-200
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
18
––– –––
S
V
DS
= 6.0V, I
D
= 8.0A
–––
17
26
I
D
= 8.0A
–––
4.4 –––
nC V
DS
= 6.0V
–––
5.2 –––
V
GS
= 4.5V
–––
16 –––
V
GS
= 0V, V
DS
= 10V
–––
9.4 –––
V
DD
= 6.0V
–––
22 –––
I
D
= 8.0A
ns
–––
16 –––
R
G
= 1.8Ω
–––
6.3 –––
V
GS
= 4.5V
––– 1730 –––
V
GS
= 0V
––– 1340 –––
V
DS
= 6.0V
––– 330 –––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
100
8.0
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.85
0.70
50
60
51
60
1.8
A
79
1.3
–––
75
90
77
90
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.0A, V
R
=12V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 8.0A, V
R
=12V
di/dt = 100A/µs
2
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IRF7910PbF
1000
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
V
GS
1000
100
V
GS
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
TOP
10
1
1.5V
0.1
1
1.5V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
0.1
0.1
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
I
D
= 10A
ID, Drain-to-Source Current
(Α
)
R
DS(on)
, Drain-to-Source On Resistance
1.5
T J = 150°C
10
(Normalized)
1.0
TJ = 25°C
0.5
1
1.0
2.0
VDS = 10V
20µs PULSE WIDTH
3.0
4.0
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 4.5V
120
140
160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7910PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
ID= 8.0A
VGS , Gate-to-Source Voltage (V)
10
8
6
4
2
0
VDS= 9.6V
VDS= 6.0V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
100
1
10
100
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.0
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
1msec
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
10msec
1
100
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7910PbF
10.0
V
DS
8.0
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
6.0
V
GS
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
2.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
(Z
thJA
)
0.20
10
0.10
Thermal Response
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
A
10
100
J
= P
DM
x Z
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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