IRF7907TRPbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) m ax
Q1
(@V
GS
= 10V)
R
DS(on) m ax
Q2
(@V
GS
= 10V)
Q
g (typical)
Q1
Q
g (typical)
Q2
I
D(@TA = 25°C)
Q1
I
D(@TA = 25°C)
Q2
30
16.4
m
Ω
11.8
6.7
14
9.1
A
11
nC
V
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
SO-8
Applications
l
Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game
Consoles and Set-Top Box
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7907PbF-1
Package Type
SO-8
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRF7907TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q1 Max.
30
± 20
9.1
7.3
76
2.0
1.3
0.016
Q2 Max.
Units
V
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
11
8.8
85
2.0
1.3
0.016
-55 to + 150
A
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
g
Junction-to-Ambient
fg
through
are on page 11.
Q1 Max.
42
62.5
Q2 Max.
42
62.5
Units
°C/W
Notes
1
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2014 International Rectifier
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October 16, 2014
IRF7907TRPbF-1
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
Q1
Q2
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
19
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
0.024
13.7
17.1
9.8
11.5
1.8
-4.6
-4.9
–––
–––
–––
–––
–––
–––
6.7
14
1.3
3.0
0.7
1.3
2.5
4.9
2.2
4.8
3.2
6.2
4.5
9.0
2.6
3.0
6.0
8.0
9.3
14
8.0
13
3.4
5.3
850
1790
190
390
88
190
Max.
–––
–––
–––
16.4
20.5
11.8
13.7
2.35
–––
–––
1.0
150
100
-100
–––
–––
10
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.7
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
12
16
4.1
5.9
Max.
2.8
2.8
76
85
1.0
1.0
18
24
6.1
8.9
Units
Conditions
V
GS
= 0V, I
D
= 250μA
V
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.1A
mΩ V
GS
= 4.5V, I
D
= 7.3A
V
GS
= 10V, I
D
= 11A
V
GS
= 4.5V, I
D
= 8.8A
Q1: V
DS
= V
GS
, I
D
= 25μA
V
mV/°C Q2: V
DS
= V
GS
, I
D
= 50μA
μA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 7.0A
V
DS
= 15V, I
D
= 8.8A
R
DS(on)
Static Drain-to-Source On-Resistance
e
e
e
e
nC
Q1
V
DS
= 15V
V
GS
= 4.5V, I
D
= 7.0A
Q2
V
DS
= 15V
V
GS
= 4.5V, I
D
= 8.8A
nC
V
DS
= 16V, V
GS
= 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ω
Q1
V
DD
= 15V, V
GS
= 4.5V
I
D
= 7.0A
ns
Q2
V
DD
= 15V, V
GS
= 4.5V
I
D
= 8.8A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Q1 Max.
10
7.0
Q2 Max.
15
8.8
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Conditions
Units
A
MOSFET symbol
showing the
integral reverse
A
p-n junction diode.
T
J
= 25°C, I
S
= 7.3A, V
GS
= 0V
V
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
Q1 T
J
= 25°C, I
F
= 7.0A,
ns
V
DD
= 15V, di/dt = 100A/μs
Q2 T
J
= 25°C, I
F
= 8.8A,
nC
V
DD
= 15V, di/dt = 100A/μs
Ã
Reverse Recovery Time
Reverse Recovery Charge
e
e
e
e
2
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2014 International Rectifier
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October 16, 2014
IRF7907TRPbF-1
Typical Characteristics
Q1 - Control FET
100
TOP
Q2 - Synchronous FET
100
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
1
0.1
2.3V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
2.3V
0.01
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
0.01
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
Fig 2.
Typical Output Characteristics
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
10
2.3V
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
2.3V
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
100.0
100.0
Fig 4.
Typical Output Characteristics
ID, Drain-to-Source Current
(Α)
10.0
ID, Drain-to-Source Current
(Α)
TJ = 150°C
10.0
TJ = 150°C
1.0
TJ = 25°C
VDS = 15V
≤
60μs PULSE WIDTH
1.0
TJ = 25°C
VDS = 15V
≤
60μs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
0.1
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
3
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2014 International Rectifier
Fig 6.
Typical Transfer Characteristics
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October 16, 2014
IRF7907TRPbF-1
Typical Characteristics
Q1 - Control FET
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Q2 - Synchronous FET
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
Ciss
C, Capacitance (pF)
Ciss
1000
Coss
100
Crss
Coss
Crss
10
1
10
100
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
12
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
12
ID= 7.0A
10
8
6
4
2
0
0
4
VDS= 24V
VDS= 15V
VDS= 6.0V
10
8
6
4
2
0
ID= 8.8A
VDS = 24V
VDS= 15V
VDS= 6.0V
8
12
16
0
5
10
15
20
25
30
QG Total Gate Charge (nC)
QG Total Gate Charge (nC)
Fig 9.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Fig 10.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1msec
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
1msec
100
10
100μsec
1
10msec
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
100msec
1
10msec
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
100msec
0.1
0.1
0.01
10
100
VDS, Drain-to-Source Voltage (V)
0.01
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
4
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2014 International Rectifier
Fig 12.
Maximum Safe Operating Area
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October 16, 2014
IRF7907TRPbF-1
Typical Characteristics
Q1 - Control FET
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
1.5
Q2 - Synchronous FET
ID = 11A
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 9.1A
VGS = 10V
VGS = 10V
1.0
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
Fig 13.
Normalized On-Resistance vs. Temperature
100.0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Fig 14.
Normalized On-Resistance vs. Temperature
100.0
ISD, Reverse Drain Current (A)
ISD, Reverse Drain Current (A)
10.0
TJ = 150°C
TJ = 150°C
10.0
1.0
1.0
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 15.
Typical Source-Drain Diode Forward Voltage
(
RDS (on), Drain-to -Source On Resistance m
Ω)
40
Fig 16.
Typical Source-Drain Diode Forward Voltage
(
RDS (on), Drain-to -Source On Resistance m
Ω)
40
ID = 8.8A
ID = 11A
30
30
20
TJ = 125°C
20
TJ = 125°C
10
TJ = 25°C
TJ = 25°C
10
2
4
6
8
10
0
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 17.
Typical On-Resistance vs.Gate Voltage
5
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2014 International Rectifier
Fig 18.
Typical On-Resistance vs.Gate Voltage
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October 16, 2014
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