PD - 97173A
IRF7855PbF
Applications
l
Primary Side Switch in Bridge Topology
in Isolated DC-DC Converters
l
Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
l
Secondary Side Synchronous
Rectification Switch for 15Vout
l
Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
V
DSS
60V
R
DS(on)
max
9.4m:@VGS = 10V
I
D
12A
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Max.
60
± 20
12
8.7
97
2.5
0.02
9.9
-55 to + 150
Units
V
A
c
e
W
W/°C
V/ns
°C
h
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
Max.
20
50
Units
°C/W
ei
–––
–––
Notes
through
are on page 8
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1
05/17/06
IRF7855PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
60
–––
–––
3.0
–––
–––
–––
–––
–––
72
7.4
–––
–––
–––
–––
–––
–––
–––
9.4
4.9
20
250
100
-100
nA
V
mΩ
V
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 12A
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
mV/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 100µA
f
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
6.8
9.6
8.7
13
16
12
1560
440
120
1910
320
520
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
ns
nC
S
I
D
= 7.2A
V
DS
= 30V
V
GS
= 10V
V
DD
= 30V
I
D
= 7.2A
R
G
= 6.2Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 25V, I
D
= 7.2A
f
f
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 48V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
Max.
540
7.2
g
Avalanche Characteristics
E
AS
I
AR
Ã
d
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
33
38
2.3
A
97
1.3
50
57
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 7.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.2A, V
DD
= 25V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7855PbF
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
4.5V
1
0.1
4.5V
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 12A
VGS = 10V
10
T J = 150°C
1.5
1
T J = 25°C
1.0
VDS = 15V
≤60µs
PULSE WIDTH
0.1
3
4
5
6
7
8
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF7855PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
12.0
ID= 7.2A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
Ciss
1000
Coss
VDS= 48V
VDS= 30V
VDS= 12V
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1msec
T J = 25°C
1
1
0.1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
100
1000
0.01
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7855PbF
12
V
DS
R
D
10
ID, Drain Current (A)
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
8
6
4
2
0
25
50
75
100
125
150
10%
V
GS
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
T A , Ambient Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
10
Thermal Response ( Z thJA )
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
A
τ
A
Ri (°C/W)
τi
(sec)
6.734
0.027848
27.268
16.003
1.3813
53
τ
1
τ
2
τ
3
Ci=
τi/Ri
Ci=
τi/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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