IRF7842PbF
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Secondary Synchronous Rectification
for Isolated DC-DC Converters
l
Synchronous
Fet for Non-Isolated
DC-DC Converters
l
Lead-Free
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
40V 5.0m @V
GS
= 10V
A
A
D
D
D
D
:
Qg (typ.)
33nC
S
S
S
G
1
2
3
4
8
7
6
5
Top View
SO-8
Base Part Number
IRF7842PbF
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7842PbF
IRF7842TRPbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
40
± 20
18
14
140
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
1
through
are on page 10
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©
2014 International Rectifier
Submit Datasheet Feedback
July 8, 2014
IRF7842PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.037
4.0
4.7
–––
- 5.6
–––
–––
–––
–––
–––
33
9.6
2.8
10
10.6
12.8
18
1.3
14
12
21
5.0
4500
680
310
Max.
–––
–––
5.0
5.9
2.25
–––
1.0
150
100
-100
–––
50
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 20V
ƒ = 1.0MHz
ns
nC
Ω
V
DD
= 20V, V
GS
= 4.5V
I
D
= 14A
Clamped Inductive Load
V
DS
= 16V, V
GS
= 0V
nC
V
DS
= 20V
V
GS
= 4.5V
I
D
= 14A
S
nA
V
mV/°C
μA
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, I
D
= 14A
Units
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 17A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
e
= 14A
e
V
DS
= V
GS
, I
D
= 250μA
e
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
99
11
Typ.
–––
–––
Max.
50
14
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Max.
3.1
A
140
1.0
150
17
V
ns
nC
Units
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
di/dt = 100A/μs
Conditions
MOSFET symbol
Ã
e
T
J
= 25°C, I
F
= 14A, V
DD
= 20V
e
2
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©
2014 International Rectifier
Submit Datasheet Feedback
July 8, 2014
IRF7842PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
2.0
100.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 18A
VGS = 10V
1.5
10.0
T J = 150°C
1.0
T J = 25°C
VDS = 25V
≤
60μs PULSE WIDTH
1.0
0.1
1.5
2.0
2.5
3.0
3.5
4.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
3
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©
2014 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
July 8, 2014
IRF7842PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12
ID= 14A
10
8
6
4
2
0
VDS= 30V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 150°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
1000
10msec
1.0
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
Submit Datasheet Feedback
July 8, 2014
IRF7842PbF
18
2.4
VGS(th) Gate threshold Voltage (V)
16
14
2.0
ID , Drain Current (A)
12
10
8
6
4
2
0
25
50
75
100
125
150
1.6
ID = 250μA
1.2
0.8
0.4
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
0.1
τ
J
0.01
τ
1
τ
2
τ
3
Ri (°C/W)
τi
(sec)
τ
C
10.48
0.138167
τ
26.83
1.8582
12.69
44.8
Ci=
τi/Ri
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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©
2014 International Rectifier
Submit Datasheet Feedback
July 8, 2014
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