PD - 96284
IRF7815PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l
Very Low R
DS(on)
at 10V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
R
DS(on)
max
Qg (typ.)
150V 43m @V
GS
= 10V 25nC
V
DSS
:
8
7
S
S
S
G
1
2
3
4
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
150
± 20
5.1
4.1
41
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
www.irf.com
1
12/01/09
IRF7815PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gs
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
150
–––
–––
3.0
–––
–––
–––
–––
–––
8.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.17
34
4.0
-12.2
–––
–––
–––
–––
–––
25
6.5
1.3
7.8
7.4
9.8
8..7
10
1.02
8.4
3.2
14
8.3
1647
129
30
–––
–––
43
5.0
–––
20
250
100
-100
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
Ω
nC
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
mV/°C
µA
nA
S
V
GS
= 10V, I
D
= 3.1A
e
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 3.1A
V
DS
= 75V
V
GS
= 10V
I
D
= 3.1A
See Figs. 6, 16a & 16b
V
DS
= 16V, V
GS
= 0V
V
DD
= 75V, V
GS
= 10V
ns
I
D
= 3.1A
R
G
= 1.8Ω
See Figs. 15a & 15b
V
GS
= 0V
V
DS
= 75V
ƒ = 1.0MHz
Max.
529
3.1
e
Avalanche Characteristics
E
AS
I
AR
d
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
41
213
2.3
A
41
1.3
62
320
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 3.1A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.1A, V
DD
= 75V
di/dt = 300A/µs
Ã
e
e
2
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IRF7815PbF
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
5.0V
1
0.1
5.0V
0.01
0.1
≤60µs
PULSE WIDTH Tj = 25°C
1
10
100
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
VDS = 50V
≤60µs
PULSE WIDTH
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 5.1A
VGS = 10V
2.0
T J = 150°C
1
T J = 25°C
1.5
1.0
0.1
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7815PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = C ds + Cgd
14.0
ID= 3.1A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 120V
VDS= 75V
VDS= 30V
10000
C, Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
10msec
1msec
1
T J = 25°C
VGS = 0V
0.1
0.3
0.5
0.7
0.9
VSD, Source-to-Drain Voltage (V)
T A = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7815PbF
6
5
ID, Drain Current (A)
6.0
VGS(th), Gate threshold Voltage (V)
5.0
4
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
4.0
ID = 100uA
ID = 150uA
ID = 250uA
ID = 1.0mA
ID = 1.0A
3.0
2.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA ) °C/W
10
1
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
4
τ
A
Ri (°C/W)
2.8482
16.4171
20.8292
9.8220
τi
(sec)
0.012383
36.75014
5.677801
0.525832
τ
1
τ
2
τ
3
τ
4
Ci=
τi/Ri
Ci=
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1
10
100
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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