IRF7805TRPbF-1
HEXFET
®
Chip-Set for DC-DC Converters
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
30
11
22
13
V
mΩ
nC
A
S
S
S
G
1
2
3
4
8
7
A
D
D
D
D
Q
g (typical)
I
D
(@T
A
= 25°C)
6
5
T o p V ie w
SO-8
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7805PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7805TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Pulsed Drain Current
Continuous Drain Current, V
GS
@ 10V
Max.
30
Units
V
e
Power Dissipation
e
Power Dissipation
c
e
@ 10V
e
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
W/°C
°C
W
A
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
eg
Junction-to-Drain Lead
1
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7805TRPbF-1
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
h
Static Drain-to-Source On-Resistance
h
Gate Threshold Voltage
h
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
30
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
9.2
–––
–––
–––
–––
–––
–––
22
3.7
1.4
6.8
8.2
3.0
–––
16
20
38
16
–––
11
3.0
70
10
150
100
-100
31
–––
–––
–––
11.5
3.6
1.7
–––
–––
–––
–––
nC
Ω
ns
V
mΩ
V
μA
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 7.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 100°C
V
GS
= 12V
V
GS
= -12V
V
GS
= 5.0V
V
DS
= 16V
I
D
= 7.0A
d
I
GSS
Q
g
Q
gs1
Q
gs2
Q
gd
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
h
nA
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
nC
h
h
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 7.0A
R
G
= 2Ω
Resistive Load
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
e
Diode Characteristics
Parameter
I
S
I
SM
V
SD
Q
rr
Q
rr(s)
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
88
55
2.5
106
1.2
–––
–––
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.0A, V
GS
= 0V
di/dt = 700A/μs
V
DS
= 16V, V
GS
= 0V, I
S
= 7.0A
di/dt = 700A/μs (with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 7.0A
Ã
h
f
–––
–––
–––
V
nC
nC
Reverse Recovery Charge
(with Parallel Schottky)
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
300
μs;
duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
R
θ
is measured at T
J
of approximately 90°C.
Devices are 100% tested to these parameters.
2
www.irf.com
©
2013 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7805TRPbF-1
Typical Characteristics
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
10
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
1
T
J
= 25
°
C
0.1
0.4
V
GS
= 0 V
0.5
0.6
0.7
0.8
0.9
V
SD
,Source-to-Drain Voltage (V)
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
100
Fig 4. Typical Source-Drain Diode Forward Voltage
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
1000
10
1
0.1
0.001
t
1
, Rectangular Pulse Duration (sec)
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
3
www.irf.com
©
2013 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7805TRPbF-1
SO-8 Package Details
D
A
5
B
DIM
A
b
INCHES
MIN
.0532
.013
.0075
.189
.1497
MAX
.0688
.0098
.020
.0098
.1968
.1574
MILLIMET ERS
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
A1 .0040
6
E
8
7
6
5
H
0.25 [.010]
A
c
D
E
e
e1
H
1
2
3
4
.050 BAS IC
.025 BAS IC
.2284
.0099
.016
0°
.2440
.0196
.050
8°
1.27 BAS IC
0.635 BASIC
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
6X
e
K
L
y
e1
A
K x 45°
C
0.10 [.004]
y
8X c
8X b
0.25 [.010]
A1
C A B
8X L
7
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS T HE LENGT H OF LEAD FOR S OLDERING TO
A SUBS TRAT E.
3X 1.27 [.050]
6.46 [.255]
FOOT PRINT
8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
4
www.irf.com
©
2013 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7805TRPbF-1
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
5
www.irf.com
©
2013 International Rectifier
Submit Datasheet Feedback
October 16, 2014
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
