PD -97693
IRFB812PbF
Applications
•
Zero Voltage Switching SMPS
•
Uninterruptible Power Supplies
•
Motor Control applications
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
500V
1.75Ω
75ns
3.6A
Features and Benefits
•
Fast body diode eliminates the need for external
diodes in ZVS applications.
•
Lower Gate charge results in simpler drive requirements.
•
Higher Gate voltage threshold offers improved noise
immunity
.
TO-220AB
Units
A
W
W/°C
V
V/ns
°C
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
3.6
2.3
14.4
78
0.63
± 20
32
-55 to + 150
300 (1.6mm from case )
10lb in (1.1N m)
P
D
@T
C
= 25°C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
e
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
x
x
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.6
A
––– 14.4
–––
75
94
135
220
3.2
1.2
110
140
200
330
4.8
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 3.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.6A
T
J
= 125°C, di/dt = 100A/μs
T
J
= 25°C, I
S
= 3.6A, V
GS
= 0V
T
J
= 125°C, di/dt = 100A/μs
T
J
= 25°C
f
f
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes
through
are on page 2
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1
6/23/11
IRFB812PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
500
–––
–––
3.0
–––
–––
–––
–––
–––
0.37
1.75
–––
–––
–––
–––
–––
–––
–––
2.2
5.0
25
2.0
100
-100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 250μA
Ω
V
GS
= 10V, I
D
= 2.2A
V V
DS
= V
GS
, I
D
= 250μA
μA
V
DS
= 500V, V
GS
= 0V
mA V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
f
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
C
oss
eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Min. Typ. Max. Units
7.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
22
24
17
810
47
7.3
610
16
5.9
37
–––
20
7.3
7.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 50V, I
D
= 2.2A
I
D
= 3.6A
V
DS
= 400V
V
GS
= 10V, See Fig.14a &14b
V
DD
= 250V
I
D
= 3.6A
R
G
= 17Ω
V
GS
= 10V, See Fig. 15a & 15b
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
V
GS
= 0V,V
DS
= 0V to 400V
f
ns
f
pF
g
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ã
d
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Notes:
Typ.
–––
–––
–––
Max.
150
1.8
7.8
Units
mJ
A
mJ
Parameter
Junction-to-Case
h
Typ.
–––
0.5
–––
Max.
1.6
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
h
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25°C, L = 93mH, R
G
= 25Ω,
I
AS
= 1.8A. (See Figure 13).
I
SD
=
3.6A, di/dt
≤
520A/μs, V
DD
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
2
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IRFB812PbF
100
TOP
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
100
TOP
VGS
15V
10V
6.2V
5.9V
5.8V
5.6V
5.5V
5.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
5.3V
0.1
5.3V
0.01
0.1
1
≤60μs
PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
0.1
Tj = 150°C
1
10
V DS, Drain-to-Source Voltage (V)
100
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
VDS = 50V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
ID = 3.6A
2.5
2.0
1.5
1.0
0.5
0.0
4
5
6
7
8
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
≤60μs
PULSE WIDTH
VGS = 10V
ID, Drain-to-Source Current(A)
10
TJ = 150°C
1
TJ = 25°C
0.1
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFB812PbF
100000
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
650
Id = 250uA
10000
C, Capacitance (pF)
1000
Ciss
600
100
Coss
Crss
550
10
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
500
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typ. Breadown Voltage
vs. Temperature
16
ID= 3.6A
VGS, Gate-to-Source Voltage (V)
100
VDS= 400V
VDS= 250V
VDS= 100V
12
ISD, Reverse Drain Current (A)
10
T J = 150°C
8
4
1
T J = 25°C
0
0
4
8
12
16
QG Total Gate Charge (nC)
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
4
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IRFB812PbF
RDS (on) , Drain-to-Source On Resistance (
Ω)
4
3.0
ID , Drain Current (A)
3
2.5
VGS = 20V
2
2.0
VGS = 10V
1
0
25
50
75
100
125
150
1.5
0
1
2
3
4
5
6
7
ID , Drain Current (A)
T C , CaseTemperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 9.
Typical Rdson Vs. Drain Current
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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