PD - 94946
SMPS
MOSFET
Applications
l
High Frequency DC-DC converters
l
Lead-Free
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
HEXFET
®
Power MOSFET
V
DSS
200V
R
DS(on)
max
0.082Ω
I
D
31A
Benefits
l
Low Gate to Drain to Reduce Switching
Losses
l
Fully Characterized Capacitance Including
Effective COSS to Simplify Design,(See
AN 1001)
l
Fully Characterized Avalanche Voltage
and Current
TO-262
TO-220AB
D
2
Pak
IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies
l
Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notes
through
are on page 11
www.irf.com
1
3/1/04
IRFB/S/SL31N20DPbF
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.25
–––
–––
–––
–––
–––
–––
Typ.
–––
70
18
33
16
38
26
10
2370
390
78
2860
150
170
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.082
Ω
V
GS
= 10V, I
D
= 18A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 200V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 18A
107
I
D
= 18A
23
nC V
DS
= 160V
65
V
GS
= 10V
–––
V
DD
= 100V
–––
I
D
= 18A
ns
–––
R
G
= 2.5Ω
–––
R
D
= 5.4Ω,
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 160V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 160V
Typ.
–––
–––
–––
Max.
420
18
20
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2
Conditions
D
MOSFET symbol
31
––– –––
showing the
A
G
integral reverse
––– ––– 124
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
––– 200 300
ns
T
J
= 25°C, I
F
= 18A
––– 1.7 2.6
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
www.irf.com
IRFB/S/SL31N20DPbF
1000
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
10
I
D
, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
10
1
5.5V
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
0.1
0.1
5.5V
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
1
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 30A
I
D
, Drain-to-Source Current (A)
2.5
100
T
J
= 175
°
C
10
2.0
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
V DS = 50V
20µs PULSE WIDTH
5
6
7
8
9
10
11
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFB/S/SL31N20DPbF
100000
20
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
= 18A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
16
10000
C, Capacitance(pF)
Ciss
1000
12
Coss
100
8
Crss
4
10
1
10
100
1000
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
100
T
J
= 175
°
C
10
10us
100us
10
1ms
1
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1
T
C
= 25 ° C
T
J
= 175° C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFB/S/SL31N20DPbF
30
V
DS
V
GS
R
G
R
D
25
D.U.T.
+
I
D
, Drain Current (A)
20
-
V
DD
10V
15
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
5
0
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
