PD - 95477
IRF9953PbF
Generation V Technology
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Ultra Low On-Resistance
l
Dual P-Channel MOSFET
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Surface Mount
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Very Low Gate Charge and
Switching Losses
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Fully Avalanche Rated
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Lead-Free
Description
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HEXFET
®
Power MOSFET
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
V
DSS
= -30V
R
DS(on)
= 0.25Ω
6
5
Top View
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
Maximum
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-30
± 20
-2.3
-1.8
-10
1.6
2.0
1.3
57
-1.3
0.20
-5.0
-55 to + 150
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
7/16/04
IRF9953PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
-1.0
Typ.
0.015
0.165
0.290
-2.4
6.1
1.7
1.1
9.7
14
20
6.9
190
120
61
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
0.250
V
GS
= 10V, I
D
= -1.0A
Ω
0.400
V
GS
= 4.5V, I
D
= -0.50A
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= -15V, I
D
= -2.3A
-2.0
V
DS
= 24V, V
GS
= 0V
µA
-25
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= -20V
nA
-100
V
GS
= 20V
12
I
D
= -2.3A
3.4
nC V
DS
= -10V
2.2
V
GS
= -10V, See Fig. 10
19
V
DD
= -10V
28
I
D
= -1.0A
ns
40
R
G
= 6.0Ω
14
R
D
= 10Ω
V
GS
= 0V
pF
V
DS
= -15V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
1.3
A
16
1.2
54
62
V
ns
nC
0.82
27
31
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.25A
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 67mH
R
G
= 25Ω, I
AS
= -1.3A.
max. junction temperature. ( See fig. 11 )
I
SD
≤
-1.3A, di/dt
≤
-92A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
IRF9953PbF
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
1
1
-3.0V
-3.0V
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
-I
D
, Drain-to-Source Current (A)
10
-I
SD
, Reverse Drain Current (A)
10
T
J
= 25°C
T
J
= 150°C
1
T
J
= 150°C
T
J
= 25°C
1
0.1
3.0
4.0
5.0
V
DS
= -10V
20µs PULSE WIDTH
6.0
7.0
8.0
A
0.1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1.4
-V
GS
, Gate-to-Source Voltage (V)
-V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
IRF9953PbF
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -1.0A
R
DS(on
)
, Drain-to-Source On Resistance (
Ω
)
2.5
2.0
1.5
1.5
1.0
V
GS
= -4.5V
1.0
0.5
0.5
V
GS
= -10V
0.0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
A
T
J
, Junction Temperature (
°
C)
-I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS(on)
, Drain-to-Source On Resistance (
Ω
)
0.80
150
E
AS
, Single Pulse Avalanche Energy (mJ)
0.60
120
ID
TOP
-0.58A
-1.0A
BOTTOM -1.3A
90
0.40
I
D
= -2.3A
60
0.20
30
0.00
0
3
6
9
12
15
A
0
25
50
75
100
125
150
-V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (
°
C)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
IRF9953PbF
400
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -2.3A
V
DS
=-10V
16
C, Capacitance (pF)
300
C
iss
C
oss
200
12
8
100
C
rss
4
0
1
10
100
A
0
0
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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