IRF9310PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -10V)
-30
4.6
V
S
1
2
3
4
8
7
6
5
D
D
D
D
R
DS(on) max
(@V
GS
= -4.5V)
mΩ
6.8
58
-20
nC
A
S
S
G
Q
g (typical)
I
D
(@T
A
= 25°C)
SO-8
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF9310PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF9310PbF-1
IRF9310TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
-30
± 20
-20
-16
-160
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes
through
are on page 2
1
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2014 International Rectifier
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June 30, 2014
IRF9310PbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.020
3.9
5.8
-1.8
-5.8
–––
–––
–––
–––
–––
58
110
17
28
2.8
25
47
65
70
5250
1300
880
–––
–––
4.6
6.8
-2.4
V
Conditions
V
GS
= 0V, I
D
= -250μA
V/°C Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -20A
mΩ
V
GS
= -4.5V, I
D
= -16A
e
e
V
DS
= V
GS
, I
D
= -100μA
––– mV/°C
V
DS
= -24V, V
GS
= 0V
-1.0
μA
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-150
-100
100
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nA
S
nC
nC
Ω
ns
V
DD
= -15V, V
GS
= -4.5V
I
D
= -1.0A
R
G
= 1.8Ω
See Figs. 20a &20b
V
GS
= 0V
V
DS
= -15V
ƒ = 1.0MHz
Max.
630
-16
Units
mJ
A
V
GS
= -20V
V
GS
= 20V
V
DS
= -10V, I
D
= -16A
V
DS
= -15V, V
GS
= -4.5V, I
D
= - 16A
V
GS
= -10V
V
DS
= -15V
I
D
= -16A
V
h
Total Gate Charge
h
Turn-On Delay Time
Rise Time
h
Gate-to-Drain Charge
h
Gate Resistance
h
Gate-to-Source Charge
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
e
Avalanche Characteristics
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
d
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
71
12
-2.5
A
-160
-1.2
107
18
Typ.
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
di/dt = 100A/μs
Max.
20
50
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
e
T
J
= 25°C, I
F
= -2.5A, V
DD
= -24V
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
e
f
g
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 4.9mH, R
G
= 25Ω, I
AS
= -16A.
Pulse width
≤
400μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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2014 International Rectifier
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June 30, 2014
IRF9310PbF-1
1000
≤
60μs PULSE WIDTH
Tj = 25°C
-ID, Drain-to-Source Current (A)
TOP
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
1000
≤
60μs PULSE WIDTH
Tj = 150°C
-ID, Drain-to-Source Current (A)
TOP
100
10
BOTTOM
100
BOTTOM
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
1
10
0.1
-2.3V
0.01
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
-2.3V
1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = -20A
VGS = -10V
-I D, Drain-to-Source Current
(Α)
1.4
100
1.2
T J = 150°C
10
T J = 25°C
VDS = -10V
≤60μs
PULSE WIDTH
1.0
1
2
3
4
5
1.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-V GS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= -16A
-VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= -24V
VDS= -15V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2014 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
1000.00
1000
100.00
T J = 150°C
10.00
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
1msec
10
1.00
T J = 25°C
1
T A = 25°C
VGS = 0V
0.10
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
-VSD, Source-to-Drain Voltage (V)
0.1
0.1
Tj = 150°C
Single Pulse
1
10msec
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
20
-V GS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.5
-I D, Drain Current (A)
15
2.0
10
ID = -100μA
1.5
5
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
100
Thermal Response ( Z thJA ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10
100
1000
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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2014 International Rectifier
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June 30, 2014
IRF9310PbF-1
RDS(on) , Drain-to -Source On Resistance (m
Ω)
ID = -20A
10
RDS(on), Drain-to -Source On Resistance ( mΩ)
12
14
12
10
8
6
VGS = -10V
4
2
0
20
40
60
80
100 120 140 160
-I D, Drain Current (A)
VGS = -4.5V
8
6
TJ = 125°C
4
TJ = 25°C
2
2
4
6
8
10
12
14
16
18
20
-V GS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
2700
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical On-Resistance vs. Drain Current
1000
2400
2100
1800
1500
1200
900
600
300
0
25
50
75
Single Pulse Power (W)
ID
TOP
-1.8A
-2.7A
BOTTOM -16A
800
600
400
200
100
125
150
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Starting T J , Junction Temperature (°C)
Time (sec)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Fig 16.
Typical Power vs. Time
D.U.T
*
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
V
GS
=10V
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
-
-
+
R
G
•
•
•
•
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
V
DD
V
DD
+
-
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor
Curent
Inductor
Current
Ripple
≤
5%
I
SD
*
Reverse Polarity of D.U.T for P-Channel
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Diode Reverse Recovery Test Circuit
for P-Channel HEXFET
®
Power MOSFETs
5
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©
2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
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