PD - 97120
IRF8736PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
100% Tested for R
G
l
Lead -Free
V
DSS
R
DS(on)
max
Qg Typ.
30V 4.8m @V
GS
= 10V 17nC
:
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
18
14.4
144
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
www.irf.com
1
08/1/07
IRF8736PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.022
3.9
5.5
1.8
-6.1
–––
–––
–––
–––
–––
17
4.4
1.9
5.8
4.9
7.7
7.1
1.3
12
15
13
7.5
2315
449
219
–––
–––
4.8
6.8
2.35
–––
1.0
150
100
-100
–––
26
–––
–––
–––
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 18A
V
V
GS
= 4.5V, I
D
= 14.4A
V
DS
= V
GS
, I
D
= 50µA
e
e
mV/°C
µA V
DS
= 24V, V
GS
= 0V
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 14.4A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 14.4A
See Fig. 16
V
DS
= 10V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 14.4A
ns
e
R
G
= 1.8Ω
See Fig. 14
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
126
14.4
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
16
19
3.1
A
144
1.0
24
29
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 14.4A, V
DD
= 10V
di/dt = 300A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF8736PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
10
0.1
1
2.3V
≤
60µs PULSE WIDTH
Tj = 150°C
0.01
2.3V
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
10
100
0.1
1
0.001
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 18A
VGS = 10V
1.5
10
TJ = 150°C
1
TJ = 25°C
0.1
1.0
VDS = 15V
≤
60µs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF8736PbF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
5
ID= 14.4A
4
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
3
Coss
Crss
2
1
100
1
10
100
0
0
4
8
12
16
20
Qg, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
100
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
100µsec
1msec
10msec
1
TJ = 150°C
10
10
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.1
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF8736PbF
20
2.4
16
VGS(th) Gate threshold Voltage (V)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
ID , Drain Current (A)
12
ID = 50µA
8
4
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
TA, Ambient Temperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( ZthJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
a
τ
2
τ
3
τ
4
τ
4
1
0.1
Ci=
τi/Ri
Ci i/Ri
Ri (°C/W)
τι
(sec)
1.396574 0.000246
7.206851 0.037927
27.1278
1.0882
14.26877
30.3
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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