IRF8714PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
8.7
8.1
14
V
mΩ
nC
A
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
Q
g (typical)
I
D
(@T
A
= 25°C)
6
5
Top View
SO-8
Applications
l
l
Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
Control MOSFET for Isolated DC-DC Converters in Networking Systems
Benefits
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
IRF8714PbF-1
Package Type
SO-8
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
IRF8714PbF-1
IRF8714TRPbF-1
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
W
W/°C
°C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
1
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2013 International Rectifier
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November 22, 2013
IRF8714PbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
71
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
7.1
10.9
1.80
-6.0
–––
–––
–––
–––
–––
8.1
1.9
1.0
3.0
2.2
4.0
4.8
1.6
10
9.9
11
5.0
1020
220
110
–––
–––
8.7
13
2.35
–––
1.0
150
100
-100
–––
12
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
ns
nC
Ω
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 14A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 25μA
e
= 11A
e
mV/°C V
DS
= V
GS
, I
D
= 25μA
μA
V
DS
= 24V, V
GS
= 0V
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 11A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 11A
See Figs. 15 & 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 11A
R
G
= 1.8Ω
See Fig. 18
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
65
11
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
14
15
3.1
A
110
1.0
21
23
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A, V
DD
= 15V
di/dt = 300A/μs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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2013 International Rectifier
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November 22, 2013
IRF8714PbF-1
1000
TOP
1000
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
0.1
0.01
10
1
2.3V
0.1
2.3V
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
1000
0.1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
1000
0.001
0.1
1
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 14A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.5
10
T J = 150°C
1
T J = 25°C
VDS = 15V
≤60μs
PULSE WIDTH
1
2
3
4
5
6
1.0
0.1
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
3
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©
2013 International Rectifier
Fig 4.
Normalized On-Resistance
vs. Temperature
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November 22, 2013
IRF8714PbF-1
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
5.0
ID= 11A
4.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
3.0
2.0
100
1.0
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
2
4
6
8
10
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
100μsec
10
10msec
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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2013 International Rectifier
Fig 8.
Maximum Safe Operating Area
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November 22, 2013
IRF8714PbF-1
14
12
ID, Drain Current (A)
2.5
VGS(th) , Gate Threshold Voltage (V)
10
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
ID = 25μA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
SINGLE PULSE
( THERMAL RESPONSE )
0.1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
Ri (°C/W)
1.9778
7.4731
26.2617
14.2991
0.000165
0.022044
0.82275
28.4
τi
(sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1
10
100
0.01
Ci=
τi/Ri
Ci=
τi/Ri
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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©
2013 International Rectifier
Submit Datasheet Feedback
November 22, 2013
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