MJL21193 (PNP),
MJL21194 (NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
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•
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are Pb−Free and are RoHS Compliant*
16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
PNP
NPN
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
−
Continuous
Collector Current
−
Peak (Note 1)
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
CM
I
B
P
D
T
J
, T
stg
Value
250
400
5
400
16
30
5
200
1.43
−65
to
+ 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
_C
1
2
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING DIAGRAM
MJL2119x
AYYWWG
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤2%
TO−264
CASE 340G
STYLE 2
x
A
YY
WW
G
3
1
EMITTER
BASE
2 COLLECTOR
= 3 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.7
Unit
_C/W
ORDERING INFORMATION
Device
MJL21193G
MJL21194G
Package
TO−264
(Pb−Free)
TO−264
(Pb−Free)
Shipping
†
25 Units / Rail
25 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJL21193/D
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 7
1
MJL21193 (PNP), MJL21194 (NPN)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
(Matched pair h
FE
= 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
h
FE
unmatched
h
FE
matched
T
HD
−
−
f
T
C
ob
4
−
0.8
0.08
−
−
−
−
−
500
MHz
pF
%
h
FE
25
8
−
−
−
−
75
−
2.2
Vdc
Vdc
−
−
−
−
1.4
4
I
S/b
Adc
4.0
2.25
−
−
−
−
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
−
100
100
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
BE(on)
V
CE(sat)
PNP MJL21193
6.5
6.0
5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
V
CE
= 10 V
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.1
T
J
= 25°C
f
test
= 1 MHz
NPN MJL21194
10 V
V
CE
= 5 V
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
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MJL21193 (PNP), MJL21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJL21193
1000
1000
NPN MJL21194
hFE , DC CURRENT GAIN
T
J
= 100°C
100
25°C
- 25°C
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
- 25°C
V
CE
= 20 V
10
0.1
10
0.1
V
CE
= 20 V
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, V
CE
= 20 V
PNP MJL21193
1000
1000
Figure 4. DC Current Gain, V
CE
= 20 V
NPN MJL21194
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
- 25°C
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
- 25°C
V
CE
= 5 V
10
0.1
10
0.1
V
CE
= 20 V
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, V
CE
= 5 V
Figure 6. DC Current Gain, V
CE
= 5 V
PNP MJL21193
30
1.5 A
I C, COLLECTOR CURRENT (A)
25
20
15
10
5.0
T
J
= 25°C
0
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
0
I C, COLLECTOR CURRENT (A)
I
B
= 2 A
35
30
25
NPN MJL21194
I
B
= 2 A
1.5 A
1A
20
15
10
5.0
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0.5 A
1A
0.5 A
Figure 7. Typical Output Characteristics
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Figure 8. Typical Output Characteristics
MJL21193 (PNP), MJL21194 (NPN)
TYPICAL CHARACTERISTICS
PNP MJL21193
3.0
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
V
CE(sat)
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0
0.1
SATURATION VOLTAGE (VOLTS)
T
J
= 25°C
I
C
/I
B
= 10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
BE(sat)
T
J
= 25°C
I
C
/I
B
= 10
NPN MJL21194
V
BE(sat)
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21193
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
T
J
= 25°C
10
T
J
= 25°C
NPN MJL21194
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
1 SEC
10
1.0
0.1
1.0
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 13 is based on T
J(pk)
= 150°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
100
1000
IC, COLLECTOR CURRENT (AMPS)
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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4
MJL21193 (PNP), MJL21194 (NPN)
10000
T
C
= 25°C
C, CAPACITANCE (pF)
C
ib
C, CAPACITANCE (pF)
10000
T
C
= 25°C
C
ib
1000
C
ob
f
(test)
= 1 MHz)
100
0.1
1.0
10
100
1000
C
ob
f
(test)
= 1 MHz)
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 14. MJL21193 Typical Capacitance
Figure 15. MJL21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
50
W
DUT
0.5
W
SOURCE
AMPLIFIER
0.5
W
8.0
W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
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