StrongIRFET™
IRFH7545PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max
I
D
60V
4.3m
5.2m
85A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
PQFN 5 x 6 mm
Base part number
IRFH7545PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7545TRPbF
)
RDS(on), Drain-to -Source On Resistance (m
20
ID = 51A
15
ID, Drain Current (A)
100
80
60
10
TJ = 125°C
40
5
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2014 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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November 7, 2014
Absolute Maximum Rating
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
T
J
Operating Junction and
T
STG
Storage Temperature Range
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
(Bottom)
Junction-to-Case
R
JC
(Top)
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
(<10s)
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Symbol
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
C
= 25°C
IRFH7545PbF
Max.
85
54
340
83
0.67
± 20
-55 to + 150
102
160
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
–––
Max.
1.5
22
34
23
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
49
––– mV/°C Reference to 25°C, I
D
= 1mA
4.3
6.0
–––
–––
–––
–––
–––
2.5
5.2
–––
3.7
1.0
150
100
-100
–––
m
V
µA
nA
V
GS
= 10V, I
D
= 51A
V
GS
= 6.0V, I
D
= 26A
V
DS
= V
GS
, I
D
= 100µA
V
DS
=60 V, V
GS
= 0V
V
DS
=60V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 78µH, R
G
= 50, I
AS
= 51A, V
GS
=10V.
I
SD
51A, di/dt
1212A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 18A, V
GS
=10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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© 2014 International Rectifier
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November 7, 2014
IRFH7545PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
73
19
22
51
8.6
26
43
16
3890
365
220
370
470
Typ.
–––
–––
–––
8.1
32
34
30
38
1.7
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 51A
110
I
D
= 51A
–––
V
DS
= 30V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 30V
–––
I
D
= 51A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
85
A
340
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 48V
V
GS
= 0V, VDS = 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
pF
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
D
G
S
T
J
= 25°C,I
S
= 51A,V
GS
= 0V
V/ns T
J
= 150°C,I
S
= 51A,V
DS
= 60V
T
J
= 25°C
V
DD
= 51V
ns
T
J
= 125°C
I
F
= 51A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A
T
J
= 25°C
3
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© 2014 International Rectifier
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November 7, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFH7545PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
60µs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 51A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
TJ = 25°C
1.6
1.2
1
VDS = 25V
0.1
2
3
4
5
6
7
60µs
PULSE WIDTH
0.8
0.4
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID = 51A
VDS = 48V
VDS = 30V
VDS= 12V
C, Capacitance (pF)
10000
Ciss
1000
Crss
Coss
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
November 7, 2014
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1000
IRFH7545PbF
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
100
10
TJ = 150°C
TJ = 25°C
10
OPERATION IN THIS
AREA LIMITED BY RDS(on)
1msec
1
VGS = 0V
0.1
0.1
0.4
0.7
1.0
1.3
1.6
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10msec
DC
10
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.6
78
Id = 1.0mA
76
74
72
70
68
66
64
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.5
0.4
Energy (µJ)
0.3
0.2
0.1
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
20.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 12.
Typical C
oss
Stored Energy
15.0
10.0
5.0
0.0
0
50
100
150
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
Submit Datasheet Feedback
November 7, 2014
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