FastIRFET™
IRFH7184PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
R
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
100
4.8
36
1.2
128
V
m
nC
A
PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Hot Swap and Active O-Ring
BLDC Motor Drive
Features
Low R
DS(ON)
(< 4.8m)
Internal Snubber
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Reduced Vds Spike, Improved EMI
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH7184PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7184TRPbF
Units
V
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
20
128
81
260
3.9
156
0.03
A
W
W/°C
°C
-55 to + 150
Notes
through
are on page 8
1
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January 06, 2015
IRFH7184PbF
Min.
100
–––
–––
2.0
–––
–––
–––
–––
117
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
54
4.0
–––
-5.4
–––
–––
–––
–––
36
7.3
2.7
11
15
13.7
120
1.2
6.5
9.9
14
3.9
2320
1070
19
Max.
–––
–––
4.8
3.6
–––
1.0
100
-100
–––
54
–––
–––
–––
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
µA
nA
S
nC
nC
ns
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 80V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 50A
V
DS
= 50V
V
GS
= 10V
I
D
= 50A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
V
DS
= 50V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 50A
R
G
= 1.0
V
GS
= 0V
pF V
DS
= 50V
ƒ = 1.0MHz
Min.
Typ.
Max. Units
Conditions
–––
–––
128
MOSFET symbol
showing the
A
integral reverse
–––
–––
260
p-n junction diode.
–––
0.8
1.3
V
T
J
= 25°C, I
S
= 50A, V
GS
=0V
–––
55
83
ns T
J
= 25°C, I
F
= 50A, V
DD
= 50V
–––
76
114
nC di/dt = 100A/µs
D
G
S
Typ.
–––
–––
Parameter
Typ.
–––
–––
–––
–––
Max.
360
50
Max.
0.8
21
32
19
Units
mJ
A
Units
°C/W
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
2
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1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
IRFH7184PbF
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
4.5V
10
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 50A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
TJ = 25°C
10
1
V DS = 50V
60µs PULSE WIDTH
0.1
1.5
2.5
3.5
4.5
5.5
V GS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = C ds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 80V
V DS= 50V
V DS= 20V
10000
C, Capacitance (pF)
Coss
Ciss
1000
Crss
100
10
1
10
V DS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2015 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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January 06, 2015
1000
IRFH7184PbF
100µsec
1msec
OPERATION IN
THIS AREA
LIMITED BY R (on)
DS
ISD, Reverse Drain Current (A)
100
TJ = 150°C
ID, Drain-to-Source Current (A)
100
10
10
TJ = 25°C
1
10msec
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.1
V GS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
V SD, Source-to-Drain Voltage (V)
0.01
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
140
Fig 8.
Maximum Safe Operating Area
4.5
V GS(th) , Gate threshold Voltage (V)
120
ID, Drain Current (A)
4.0
3.5
3.0
2.5
2.0
1.5
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
1
D = 0.50
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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January 06, 2015
1000
IRFH7184PbF
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j
= 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 12.
Typical Avalanche Current vs. Pulse Width
RDS(on), Drain-to -Source On Resistance (m
)
12
ID = 50A
1500
EAS , Single Pulse Avalanche Energy (mJ)
10
1250
1000
750
500
250
0
ID
TOP
13A
21A
BOTTOM 50A
8
T J = 125°C
6
4
T J = 25°C
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 13.
On–Resistance vs. Gate Voltage
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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January 06, 2015
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