StrongIRFET™
IRFH7085PbF
HEXFET
®
Power MOSFET
Application
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC converters
DC/AC Inverters
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
I
D (Package Limited)
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
60V
2.6m
3.2m
147A
100A
PQFN 5X6 mm
Base part number
IRFH7085PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7085TRPbF
RDS(on), Drain-to -Source On Resistance (m
)
8.0
ID = 75A
7.0
6.0
5.0
4.0
3.0
2.0
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
150
125
ID, Drain Current (A)
Limited By Package
100
75
50
25
0
25
50
75
100
125
150
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
Symbol
Parameter
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@ T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
T
J
Operating Junction and
T
STG
Storage Temperature Range
Avalanche Characteristics
Symbol
Parameter
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
I
AR
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Parameter
Junction-to-Case
R
JC
(Bottom)
Junction-to-Case
R
JC
(Top)
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
(<10s)
IRFH7085PbF
Max.
23
147
93
100
590
156
1.25
± 20
-55 to + 150
Max.
319
554
See Fig 15, 16, 23a, 23b
Typ.
0.5
–––
–––
–––
Max.
0.8
20
34
22
Units
A
A
W
W/°C
V
°C
Units
mJ
A
mJ
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
43
2.6
3.6
–––
–––
–––
–––
–––
1.4
Max.
–––
–––
3.2
–––
3.7
1.0
150
100
-100
–––
Units
V
mV/°C
m
V
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 75A
V
GS
= 6.0V, I
D
= 38A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V,V
GS
= 0V,T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Package is limited to 100A by
production test capability.
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 113µH, R
G
= 50, I
AS
= 75A, V
GS
= 10V.
I
SD
75A, di/dt
1280A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 33A, V
GS
=10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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March 17, 2015
IRFH7085PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Min.
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S V
DS
= 10V, I
D
= 75A
110 165
I
D
= 75A
V
DS
= 30V
30
–––
nC
V
GS
= 10V
36
–––
74
–––
13
–––
V
DD
= 30V
25
63
23
6460
560
380
570
715
–––
–––
–––
–––
–––
–––
–––
–––
ns
I
D
= 30A
R
G
= 2.7
V
GS
= 10V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
V
GS
= 0V, V
DS
= 0V to 48V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
––– 147
A
–––
–––
3.0
31
30
39
33
1.9
590
1.2
–––
–––
–––
–––
–––
–––
V
D
G
S
T
J
= 25°C,I
S
= 75A,V
GS
= 0V
V
DD
= 51V
I
F
= 75A,
di/dt = 100A/µs
V/ns T
J
= 150°C,I
S
= 75A,V
DS
= 60V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
nC
T
J
= 125°C
ns
A
T
J
= 25°C
3
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© 2015 International Rectifier
Submit Datasheet Feedback
March 17, 2015
10000
TOP
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
IRFH7085PbF
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
BOTTOM
100
BOTTOM
10
10
4.3V
1
4.0V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.4
ID = 75A
VGS = 10V
ID, Drain-to-Source Current (A)
2.0
100
T J = 150°C
1.6
1.2
10
T J = 25°C
0.8
VDS = 25V
60µs
PULSE WIDTH
1.0
3
4
5
6
7
8
0.4
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 75A
VDS= 48V
VDS= 30V
10000
Ciss
1000
Crss
Coss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
March 17, 2015
1000
1000
IRFH7085PbF
1msec
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
Limited by
package
OPERATION
IN THIS
AREA
LIMITED BY
R DS(on)
100
T J = 150°C
10
1
10
T J = 25°C
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
VGS = 0V
1.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
0.01
10
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
1.2
76
Id = 1.0mA
74
72
Energy (µJ)
1.0
0.8
0.6
0.4
0.2
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
70
68
66
64
T J , Temperature ( °C )
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
3.4
3.2
3.0
2.8
2.6
2.4
2.2
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
VGS = 6.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2015 International Rectifier
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March 17, 2015
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