StrongIRFET™
IRFH7084PbF
Application
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
V
DSS
R
DS(on) typ.
max
40V
0.95m
1.25m
265A
100A
I
D (Silicon Limited)
I
D (Package Limited)
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
PQFN 5X6 mm
Base part number
IRFH7084PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7084TRPbF
m)
RDS (on), Drain-to -Source On Resistance (
6
300
ID = 100A
5
240
ID, Drain Current (A)
Limited by package
4
180
3
2
TJ = 125°C
120
1
60
TJ = 25°C
0
4
8
12
16
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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March 19, 2015
Absolute Maximium Rating
Symbol
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Linear Derating Factor
Max Power Dissipation
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
IRFH7084PbF
Max.
40
265
170
100
400
1.25
156
± 20
-55 to + 150
Units
A
A
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Parameter
R
JC
(Bottom)
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
185
431
See Fig 14, 15, 23a,
mJ
A
mJ
Units
°C/W
Typ.
0.5
–––
–––
–––
Max.
0.8
21
35
20
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
R
G
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min. Typ. Max. Units
Conditions
40
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.034 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.95 1.25 m V
GS
= 10V, I
D
= 100A
2.2 –––
3.9
V V
DS
= V
GS
, I
D
= 150µA
––– –––
1.0
V
DS
=40 V, V
GS
= 0V
µA
––– ––– 150
V
DS
=40V,V
GS
= 0V,T
J
=125°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
–––
1.4
–––
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.037mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
994A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 29A, V
GS
=10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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March 19, 2015
IRFH7084PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S V
DS
= 10V, I
D
=100A
127 190
I
D
= 100A
35
–––
V
DS
= 20V
nC
41
–––
V
GS
= 10V
195 –––
16
–––
V
DD
= 20V
I
D
= 30A
31
–––
ns
64
–––
R
G
= 2.7
V
GS
= 10V
34
–––
6560
940
650
1120
1300
–––
–––
–––
–––
–––
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
pF
V
GS
= 0V, VDS = 0V to 32V
See Fig.11
V
GS
= 0V, VDS = 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Diode Characteristics
Typ. Max. Units
––– 100
A
–––
–––
4.5
36
37
38
40
1.7
400
1.3
–––
–––
–––
–––
–––
–––
V
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
V/ns T
J
= 150°C,I
S
=100A,V
DS
= 40V
T
J
= 25°C
V
DD
= 34V
ns
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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© 2015 International Rectifier
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March 19, 2015
10000
TOP
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
IRFH7084PbF
10000
TOP
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
1000
100
BOTTOM
BOTTOM
100
10
10
1
4.0V
60µs PULSE WIDTH
Tj = 150°C
4.0V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
10000
Fig 4.
Typical Output Characteristics
1.8
ID, Drain-to-Source Current (A)
1000
1.6
ID = 100A
VGS = 10V
1.4
100
TJ = 150°C
(Normalized)
1.2
10
TJ = 25°C
1
1.0
VDS = 10V
60µs PULSE WIDTH
0.8
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.6
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 100A
VDS = 32V
VDS = 20V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
0
40
80
120
160
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
March 19, 2015
10000
IRFH7084PbF
1000
ISD , Reverse Drain Current (A)
TJ = 150°C
ID, Drain-to-Source Current (A)
1000
100µsec
100
L
imited by
10
Package
100
1msec
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10msec
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
DC
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
10
VSD , Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.9
49
48
47
Energy (µJ)
Id = 1.0mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
46
45
44
43
42
41
40
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to–Source Breakdown Voltage
RDS (on), Drain-to -Source On Resistance (
)
m
Fig 12.
Typical C
oss
Stored Energy
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
40
80
120
160
200
ID, Drain Current (A)
VGS = 6.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
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