IRFH5220PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
200
99.9
20
2.3
20
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
Secondary Side Synchronous Rectification
•
Inverters for DC Motors
•
DC-DC Brick Applications
•
Boost Converters
Features and Benefits
Features
Benefits
Low R
DSon
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRFH5220TRPBF
IRFH5220TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Note
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
EOL notice # 259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C(Top)
= 25°C
I
D
@ T
C(Top)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Top)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
200
± 20
3.8
3.0
20
13
5.8
3.7
47
3.6
8.3
0.07
-55 to + 150
Units
V
A
g
f
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
f
Notes
through
are on page 8
1
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2015 International Rectifier
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March 19, 2015
IRFH5220PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.21
80
–––
-11
–––
–––
–––
–––
–––
20
5.4
1.3
6.3
7.0
7.6
9.4
2.3
7.2
4.7
14
3.4
1380
100
23
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
99.9
mΩ V
GS
= 10V, I
D
= 5.8A
5.0
V
V
DS
= V
GS
, I
D
= 100μA
––– mV/°C
20
μA
V
DS
= 200V, V
GS
= 0V
1.0
mA V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 50V, I
D
= 5.8A
e
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
V
DS
= 100V
V
GS
= 10V
I
D
= 5.8A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 100V, V
GS
= 10V
I
D
= 5.8A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
nC
Ω
ns
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
39
355
Typ.
–––
–––
Max.
290
5.8
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
5.8
A
47
1.3
59
530
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 5.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.8A, V
DD
= 100V
di/dt = 500A/μs
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
g
Junction-to-Ambient
g
f
Typ.
–––
–––
–––
–––
Max.
1.2
15
35
22
Units
°C/W
2
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2015 International Rectifier
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March 19, 2015
IRFH5220PbF
100
TOP
1000
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
8.0V
7.5V
7.0V
6.8V
6.5V
6.3V
6.0V
TOP
100
BOTTOM
VGS
10V
8.0V
7.5V
7.0V
6.8V
6.5V
6.3V
6.0V
1
10
0.1
6.0V
≤
60μs PULSE WIDTH
Tj = 25°C
1
6.0V
≤
60μs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
2.5
Fig 2.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 5.8A
VGS = 10V
VDS = 50V
ID, Drain-to-Source Current (A)
≤
60μs PULSE WIDTH
10
2.0
1
TJ = 150°C
TJ = 25°C
1.5
1.0
0.1
0.5
0.01
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance Vs. Temperature
16
VGS, Gate-to-Source Voltage (V)
ID= 5.8A
12
VDS = 160V
VDS = 100V
VDS = 40V
8
C, Capacitance (pF)
10000
1000
Ciss
Coss
100
4
Crss
10
1
10
100
1000
0
0
10
20
30
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
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March 19, 2015
IRFH5220PbF
1000
100
ISD, Reverse Drain Current (A)
TJ = 150°C
10
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
100μsec
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
6
6.0
Fig 8.
Maximum Safe Operating Area
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 100μA
VGS(th) Gate threshold Voltage (V)
25
50
75
100
125
150
5.5
5.0
4.5
4.0
3.5
3.0
2.5
-75
-50
-25
0
25
50
ID , Drain Current (A)
4
2
0
75
100
125
150
TC , CaseTemperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Top) Temperature
100
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC )
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Top)
4
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2015 International Rectifier
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March 19, 2015
IRFH5220PbF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
1200
EAS, Single Pulse Avalanche Energy (mJ)
200
ID = 5.8A
160
1000
I D
TOP
0.98A
1.4A
BOTTOM
5.8A
TJ = 125°C
120
800
600
400
80
TJ = 25°C
40
4
8
12
16
20
200
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2015 International Rectifier
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March 19, 2015
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