IRFH5206PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
60
6.7
40
1.7
89
V
m
:
Q
g (typical)
R
G (typical)
I
D
nC
:
A
(@T
c(Bottom)
= 25°C)
PQFN 5X6 mm
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Benefits
Features and Benefits
Features
Low R
DSon
(≤ 7.0mΩ at Vgs=10V)
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Industry-Standard Pinout
Easier Manufacturing
Compatible with Existing Surface Mount Techniques
Environmentally Friendlier
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Increased Reliability
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
EOL notice # 259
Orderable part number
IRFH5206TRPBF
IRFH5206TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
60
± 20
16
13
89
56
350
3.6
100
0.83
-55 to + 150
Units
V
A
g
f
c
W
W/°C
°C
Linear Derating Factor (Bottom)
Operating Junction and
Storage Temperature Range
f
Notes
through
are on page 9
1
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2015 International Rectifier
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March 19, 2015
IRFH5206PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
60
–––
–––
2.0
–––
–––
–––
–––
–––
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
5.6
–––
-9.7
–––
–––
–––
–––
–––
40
6.2
3.4
12
18.4
15.4
14
1.7
6.4
11
22
8.2
2490
360
160
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
6.7
mΩ V
GS
= 10V, I
D
= 50A
4.0
V
V
DS
= V
GS
, I
D
= 100μA
––– mV/°C
20
V
DS
= 60V, V
GS
= 0V
μA
250
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 25V, I
D
= 50A
60
–––
V
DS
= 30V
–––
V
GS
= 10V
nC
I
D
= 50A
–––
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
–––
–––
–––
–––
–––
–––
–––
–––
Ω
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 50A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
26
Typ.
–––
–––
Max.
87
50
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
89
A
350
1.3
39
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
–––
110
165
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 30V
di/dt = 500A/μs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
1.2
15
35
22
Units
°C/W
2
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2015 International Rectifier
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March 19, 2015
IRFH5206PbF
1000
TOP
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
TOP
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
3.8V
1
3.8V
≤60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
≤60μs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
2.0
Fig 2.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
VGS = 10V
1.5
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
1.0
VDS = 25V
≤
60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance Vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
C, Capacitance (pF)
Ciss
VDS = 48V
VDS = 30V
VDS= 12V
1000
Coss
Crss
100
1
10
100
20
30
40
50
60
VDS , Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
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March 19, 2015
IRFH5206PbF
1000
1000
OPERATION IN THIS ARE LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
1msec
100μsec
10
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10
100
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
100
Fig 8.
Maximum Safe Operating Area
4.0
VGS(th), Gate threshold Voltage (V)
80
3.5
ID , Drain Current (A)
60
3.0
40
2.5
ID = 150μA
ID = 500μA
ID = 1.0mA
ID = 1.0A
20
2.0
0
25
50
75
100
125
150
1.5
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
TC , CaseTemperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
10
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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March 19, 2015
IRFH5206PbF
20
ID = 50A
400
EAS , Single Pulse Avalanche Energy (mJ)
Ω
RDS(on), Drain-to -Source On Resistance (m )
300
ID
TOP
5.1A
13A
BOTTOM 50A
15
200
TJ = 125°C
10
100
TJ = 25°C
5
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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March 19, 2015
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