800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Renesas(瑞萨电子) |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V |
最大漏极电流 (Abs) (ID) | 0.8 A |
最大漏极电流 (ID) | 0.8 A |
最大漏源导通电阻 | 0.8 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDIP-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 1 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
IRFD112R | IRFD110R | IRFD113 | IRFD113R | IRFD112 | IRFD111 | IRFD111R | |
---|---|---|---|---|---|---|---|
描述 | 800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 800mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 800mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1000mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1000mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V | 100 V | 80 V | 80 V | 100 V | 80 V | 80 V |
最大漏极电流 (Abs) (ID) | 0.8 A | 1 A | 0.8 A | 0.8 A | 0.8 A | 1 A | 1 A |
最大漏极电流 (ID) | 0.8 A | 1 A | 0.8 A | 0.8 A | 0.8 A | 1 A | 1 A |
最大漏源导通电阻 | 0.8 Ω | 0.6 Ω | 0.8 Ω | 0.8 Ω | 0.8 Ω | 0.6 Ω | 0.6 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDIP-T3 | R-PDIP-T3 | R-XDIP-T4 | R-PDIP-T3 | R-XDIP-T4 | R-XDIP-T4 | R-PDIP-T3 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 4 | 3 | 4 | 4 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED | PLASTIC/EPOXY | UNSPECIFIED | UNSPECIFIED | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 1 W | 1 W | 1 W | 1 W | 1 W | 1 W | 1 W |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | - | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | - | Not Qualified | - | - | Not Qualified |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | - | NOT SPECIFIED |
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